http://www.cnr.it/ontology/cnr/individuo/prodotto/ID176810
Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells (Articolo in rivista)
- Type
- Label
- Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.tsf.2005.02.013 (literal)
- Alternative label
F. Capotondi (a,b); G. Biasiol (a); D. Ercolani (a,b); V. Grillo (a); E. Carlino (a); F. Romanato (a); L. Sorba (a,b) (2005)
Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells
in Thin solid films (Print); Elsevier Science SA, Lausanne (Svizzera)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- F. Capotondi (a,b); G. Biasiol (a); D. Ercolani (a,b); V. Grillo (a); E. Carlino (a); F. Romanato (a); L. Sorba (a,b) (literal)
- Pagina inizio
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://www.sciencedirect.com/science/article/pii/S0040609005002014 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- Google Scholar (literal)
- Scopus (literal)
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- a Laboratorio Nazionale TASC-INFM, S.S. 14, Km 163,5 Basovizza, I-34012 Trieste, Italy
b Università degli Studi di Modena e Reggio Emilia, Via Campi 213/a, I-41100 Modena, Italy (literal)
- Titolo
- Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells (literal)
- Abstract
- The relationship between structural and low-temperature transport properties is explored for InxAl1 - xAs/InxGa1 - xAs metamorphic quantum wells with x > 0.7 grown on GaAs by molecular beam epitaxy. Different step-graded buffer layers are used to gradually adapt the in-plane lattice parameter from the GaAs towards the InGaAs value. We show that using buffer layers with a suitable maximum In content the residual compressive strain in the quantum well region can be strongly reduced. Samples with virtually no residual strain in the quantum well region show a low-temperature electron mobility up to 29 m2/V s while for samples with higher residual compressive strain the low-temperature mobility is reduced. Furthermore, for samples with buffers inducing a tensile strain in the quantum well region, deep grooves are observed on the surface, and in correspondence we notice a strong deterioration of the low-temperature transport properties. (literal)
- Editore
- Prodotto di
- Autore CNR
Incoming links:
- Autore CNR di
- Prodotto
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Editore di