Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells (Articolo in rivista)

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  • Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.tsf.2005.02.013 (literal)
Alternative label
  • F. Capotondi (a,b); G. Biasiol (a); D. Ercolani (a,b); V. Grillo (a); E. Carlino (a); F. Romanato (a); L. Sorba (a,b) (2005)
    Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells
    in Thin solid films (Print); Elsevier Science SA, Lausanne (Svizzera)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • F. Capotondi (a,b); G. Biasiol (a); D. Ercolani (a,b); V. Grillo (a); E. Carlino (a); F. Romanato (a); L. Sorba (a,b) (literal)
Pagina inizio
  • 400 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0040609005002014 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 484 (literal)
Rivista
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  • Google Scholar (literal)
  • Scopus (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a Laboratorio Nazionale TASC-INFM, S.S. 14, Km 163,5 Basovizza, I-34012 Trieste, Italy b Università degli Studi di Modena e Reggio Emilia, Via Campi 213/a, I-41100 Modena, Italy (literal)
Titolo
  • Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells (literal)
Abstract
  • The relationship between structural and low-temperature transport properties is explored for InxAl1 - xAs/InxGa1 - xAs metamorphic quantum wells with x > 0.7 grown on GaAs by molecular beam epitaxy. Different step-graded buffer layers are used to gradually adapt the in-plane lattice parameter from the GaAs towards the InGaAs value. We show that using buffer layers with a suitable maximum In content the residual compressive strain in the quantum well region can be strongly reduced. Samples with virtually no residual strain in the quantum well region show a low-temperature electron mobility up to 29 m2/V s while for samples with higher residual compressive strain the low-temperature mobility is reduced. Furthermore, for samples with buffers inducing a tensile strain in the quantum well region, deep grooves are observed on the surface, and in correspondence we notice a strong deterioration of the low-temperature transport properties. (literal)
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