Two-dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum wells (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Two-dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum wells (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1116/1.1688345 (literal)

Alternative label

• Capotondi, F; Biasiol, G; Vobornik, I; Sorba, L; Giazotto, F; Cavallini, A; Fraboni, B (2004)
  Two-dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum wells
  in Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Online)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Capotondi, F; Biasiol, G; Vobornik, I; Sorba, L; Giazotto, F; Cavallini, A; Fraboni, B (literal)

Pagina inizio

• 702 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://avspublications.org/jvstb/resource/1/jvtbd9/v22/i2/p702_s1 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 22 (literal)

Rivista

• Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 2 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1Laboratorio Nazionale TASC-INFM, 34012 Trieste, Italy 2NEST-INFM and Scuola Normale Superiore, 56126 Pisa, Italy 3INFM and Dipartimento di Fisica, Università di Bologna, 40127 Bologna, Italy (literal)

Titolo

• Two-dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum wells (literal)

Abstract

• We report on the achievement of a two-dimensional electron gas in completely undoped In0.75Al0.25As/In0.75Ga0.25As metamorphic quantum wells. Using these structures we were able to reduce the carrier density, with respect to reported values in similar modulation-doped structures, to about 2-3×1011 cm-2 with mobilities of up to 2.15×105 cm2 (V s)-1. We found experimentally that the electronic charge in the quantum well is likely due to a deep-level donor state in the In0.75Al0.25As barrier band gap, whose energy lies within the In0.75Ga0.25As/In0.75Al0.25As conduction band discontinuity. This result is further confirmed through a Poisson-Schrödinger simulation of the two-dimensional electron gas structure. (literal)

Autore CNR

• FRANCESCO GIAZOTTO (Unità di personale interno)
• IVANA VOBORNIK (Persona)
• GIORGIO BIASIOL (Unità di personale interno)
• LUCIA SORBA (Unità di personale interno)

Incoming links:

Autore CNR di

• FRANCESCO GIAZOTTO (Unità di personale interno)
• IVANA VOBORNIK (Persona)
• LUCIA SORBA (Unità di personale interno)
• GIORGIO BIASIOL (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Rivista)