Characterization of Ga2O3 based MRISiC hydrogen gas sensors (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Characterization of Ga2O3 based MRISiC hydrogen gas sensors (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.snb.2004.04.112 (literal)

Alternative label

• A. Trinchi 1; S. Kaciulis 3; L. Pandolfi 3; M.K. Ghantasala 2; Y.X. Li 5; W. Wlodarski 1; S. Viticoli 3; E. Comini 6; G. Sberveglieri 6 (2004)
  Characterization of Ga2O3 based MRISiC hydrogen gas sensors
  in Sensors and actuators. B, Chemical (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A. Trinchi 1; S. Kaciulis 3; L. Pandolfi 3; M.K. Ghantasala 2; Y.X. Li 5; W. Wlodarski 1; S. Viticoli 3; E. Comini 6; G. Sberveglieri 6 (literal)

Pagina inizio

• 129 (literal)

Pagina fine

• 135 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 103 (literal)

Rivista

• Sensors and actuators. B, Chemical (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1-2 (literal)

Note

• ISI Web of Science (WOS) (literal)
• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic 3001, Australia 2. CRC Microtechnol, Hawthorn, Vic, Australia 3. CNR-ISMN, I-00016 Monterotondo, RM, Italy 4. Western Michigan Univ, Dept Mech & Aeronaut Engn, Kalamazoo, MI 49008 USA 5. Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 6. Univ Brescia, Dept Mat Chem & Phys, Brescia, Italy (literal)

Titolo

• Characterization of Ga2O3 based MRISiC hydrogen gas sensors (literal)

Abstract

• This paper presents the results of our investigations on the hydrogen gas response of Pt/Ga2O3/SiC devices operated as Schottky diodes highlighting the importance of gallium oxide as a layer within the device. The Ga2O3 thin films were prepared using the sol-gel technique. The investigation reported in this paper also includes the compositional characterization of the Ga2O3 films using X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). Results show the films consisted of stoichiometric Ga2O3, with a thickness of less than 100 nm. RBS analysis indicated that the films are stoichiometric and reproducible. For gas sensing experiments, the diodes were biased at a constant current varying between 1 and 2 mA and their responses to H-2 in different ambient was measured. The sensors were extremely stable, varying from its mean baseline value by only 0.014%. When operated in oxygen rich ambient the magnitude of the responses was larger. The response and recovery times also appear to be large, owing to nearly total interaction or combustion of the dissociated hydrogen molecules on the surface of the device. (literal)

Prodotto di

• Sintesi e crescita di film e superfici nanostrutturate (PM.P05.004.002) (Modulo)
• Istituto per lo studio dei materiali nanostrutturati (ISMN) (Istituto)

Autore CNR

• ELISABETTA COMINI (Unità di personale esterno)
• SAULIUS KACIULIS (Persona)

Insieme di parole chiave

• Parole chiave di "Characterization of Ga2O3 based MRISiC hydrogen gas sensors" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto per lo studio dei materiali nanostrutturati (ISMN) (Istituto)
• Sintesi e crescita di film e superfici nanostrutturate (PM.P05.004.002) (Modulo)

Autore CNR di

• ELISABETTA COMINI (Unità di personale esterno)
• SAULIUS KACIULIS (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Sensors and actuators. B, Chemical (Rivista)

Insieme di parole chiave di

• Parole chiave di "Characterization of Ga2O3 based MRISiC hydrogen gas sensors" (Insieme di parole chiave)