Electrical Investigation of Carbon Intrinsically- Doped GaAs Layers Grown by Metalorganic Vapour Phase Epitaxy from TMGa and TBAs (Articolo in rivista)

Type
Label
  • Electrical Investigation of Carbon Intrinsically- Doped GaAs Layers Grown by Metalorganic Vapour Phase Epitaxy from TMGa and TBAs (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/pssc.200306222 (literal)
Alternative label
  • C. Ghezzi 1; M. Longo 1; R. Magnanini 1; A. Parisini 1; L. Tarricone 1; A. Carbognani 1; C. Bocchi 2; and E. Gombia 2 (2003)
    Electrical Investigation of Carbon Intrinsically- Doped GaAs Layers Grown by Metalorganic Vapour Phase Epitaxy from TMGa and TBAs
    in Physica status solidi. C, Conferences and critical reviews
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • C. Ghezzi 1; M. Longo 1; R. Magnanini 1; A. Parisini 1; L. Tarricone 1; A. Carbognani 1; C. Bocchi 2; and E. Gombia 2 (literal)
Pagina inizio
  • 835 (literal)
Pagina fine
  • 839 (literal)
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  • 3 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
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  • 1 Istituto Nazionale di Fisica della Materia, Dipartimento di Fisica Università di Parma, Parco Area delle Scienze 7a, 43100 Parma, Italy 2 Istituto IMEM-CNR, Parco Area delle Scienze 37a, 43010 Parma, Italy (literal)
Titolo
  • Electrical Investigation of Carbon Intrinsically- Doped GaAs Layers Grown by Metalorganic Vapour Phase Epitaxy from TMGa and TBAs (literal)
Abstract
  • In this work the possibility of controlling carbon intrinsic-doping in GaAs homoepitaxial layers grown by metalorganic vapour phase epitaxy (MOVPE) from the trimethyl-gallium (TMGa) and tertiary-buthylarsine (TBAs) precursors was evaluated via the analysis of transport properties as a function of the growth parameters and for two substrates mis-orientations; Hall effect measurements were performed on the samples as a function of temperature. Intrinsically p-doped GaAs layers were obtained with a hole concentration in the range (1014-1018) cm-3 and a corresponding RT mobility in the range (100-400) cm2/Vs. The simultaneous analysis of the Hall free hole density and Hall mobility yielded the effective doping level, the compensation ratio and the thermal ionisation energy of the acceptor impurity as a function of the growth parameters. (literal)
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