Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3284084 (literal)

Alternative label

• J.-L. Battaglia 1; A. Kusiak 1; V. Schick 1; A. Cappella 1; C. Wiemer 2; M. Longo 2; E. Varesi 3 (2010)
  Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• J.-L. Battaglia 1; A. Kusiak 1; V. Schick 1; A. Cappella 1; C. Wiemer 2; M. Longo 2; E. Varesi 3 (literal)

Pagina inizio

• 044314 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 107 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1 Laboratory TREFLE, UMR 8508, University of Bordeaux, 33405 Talence Cedex, France 2 Laboratorio MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza, Milano, Italy 3 Numonyx, Via C. Olivetti 2, 20041 Agrate Brianza, Milan, Italy (literal)

Titolo

• Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C (literal)

Abstract

• The thermal conductivity of Ge2Sb2Te5 GST layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, was measured using a photothermal radiometry experiment. The two phase changes in the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the face centered cubic fcc crystalline state at 130 °C and then to the hexagonal crystalline phase hcp at 310 °C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• MASSIMO LONGO (Unità di personale interno)
• CLAUDIA WIEMER (Persona)

Incoming links:

Autore CNR di

• MASSIMO LONGO (Unità di personale interno)
• CLAUDIA WIEMER (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)