Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Alternative label

• M. Fanciulli1 2; A. Vellei 1, 2; C. Canevali 1; S. Baldovino 1; G. Pennelli 3; and M. Longo 2 (2011)
  Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires
  in Nanoscience and nanotechnology letters (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Fanciulli1 2; A. Vellei 1, 2; C. Canevali 1; S. Baldovino 1; G. Pennelli 3; and M. Longo 2 (literal)

Pagina inizio

• 568 (literal)

Pagina fine

• 574 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 3 (literal)

Rivista

• Nanoscience and nanotechnology letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1 Department of Material Science, Università degli Studi di Milano Bicocca, Via R. Cozzi 53 20125 Milano, Italy 2 CNR-IMM MDM Laboratory, Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy 3 Dipartimento di Ingegneria della Informazione: Elettronica, Informatica, Telecomunicazioni, Università di Pisa, Via G. Caruso, I-56122 Pisa, Italy (literal)

Titolo

• Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires (literal)

Abstract

• We report our work on the characterization by electrically detected magnetic resonance (EDMR) measurements of silicon nanowires (SiNWs) produced by different top-down processes. SiNWs were fabricated starting from SOI wafers using standard e-beam lithography and anisotropic wet etching or by metal-assisted chemical etching. Further oxidation was used to reduce the wire cross section. Different EDMR implementations were used to address the electronic wave function of donors (P) and to characterize point defects at the SiNWs/SiO2 interface. The EDMR spectra of as produced SiNWs with high donor concentration ([P] = 1018 cm-3 show a single line related to delocalized electrons. SiNWs produced on substrates with lower donor concentration ([P] < 1016 cm-3 reveal the doublet related to substitutional P in Si, as well as lines related to interfacial defects such as Pb0, Pb, E', and E'-like. The EDMR spectra of samples produced by metal-assisted chemical etching exposed to post production oxidation reveal a disordered and defective interface and the disappearance of the P related signal. Forming gas annealing, on the other hand, reduces the contribution of interfacial defects and allows a better resolution of the P related doublet. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ANTONIO VELLEI (Unità di personale esterno)
• MARCO FANCIULLI (Unità di personale esterno)
• MASSIMO LONGO (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• MASSIMO LONGO (Unità di personale interno)
• MARCO FANCIULLI (Unità di personale esterno)
• ANTONIO VELLEI (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nanoscience and nanotechnology letters (Rivista)

Insieme di parole chiave di

• Keywords of "Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires" (Insieme di parole chiave)