Schottky Barrier Inhomogeneities in Nickel Silicide Transrotational Contacts (Articolo in rivista)

Type
Label
  • Schottky Barrier Inhomogeneities in Nickel Silicide Transrotational Contacts (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1143/APEX.4.115701 (literal)
Alternative label
  • Alessandra A.; Roccaforte F; Libertino S; Bongiorno C; La Magna A (2011)
    Schottky Barrier Inhomogeneities in Nickel Silicide Transrotational Contacts
    in Applied physics express
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Alessandra A.; Roccaforte F; Libertino S; Bongiorno C; La Magna A (literal)
Pagina inizio
  • 1157011 (literal)
Pagina fine
  • 1157013 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 4 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM (literal)
Titolo
  • Schottky Barrier Inhomogeneities in Nickel Silicide Transrotational Contacts (literal)
Abstract
  • Ni-silicide/silicon Schottky contacts have been realised by promoting low-temperature Ni-Si interdiffusion during deposition (?50 ?C) and reaction (450 ?C) on an oxygen-free [001] silicon surface. A 14nm transrotational NiSi layer was produced made of extremely flat pseudo-epitaxial domains (?200nm in diameter). The current-voltage (I-V) characteristics (340-80 K) have indicated the presence of structural inhomogeneities which lower the Schottky barrier by ? ? 0:1 eV. They have been associated with the core regions of the trans-domains (wherein the silicide lattice is epitaxially aligned to that of Si) since their density (?2:5 ? 109 cm?2) and dimension (?10 nm) fit the I-V curves vs temperature following the Tung's approach. # 2011 The Japan Society of Applied Physics (literal)
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