Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy (Articolo in rivista)

Type
Label
  • Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/0957-4484/16/5/001 (literal)
Alternative label
  • A Colli; S Hofmann;A C Ferrari; F Martelli; S Rubini; C Ducati; A Franciosi; J Robertson; (2005)
    Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy
    in Nanotechnology (Bristol, Online)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A Colli; S Hofmann;A C Ferrari; F Martelli; S Rubini; C Ducati; A Franciosi; J Robertson; (literal)
Pagina inizio
  • S139 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 16 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, UK Laboratorio Nazionale TASC-INFM, Area Science Park, 34012 Trieste, Italy Department ofMaterials Science andMetallurgy, University of Cambridge, Cambridge, UK Dipartimento di Fisica, Universita' di Trieste, 34127 Trieste, Italy (literal)
Titolo
  • Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy (literal)
Abstract
  • Controlled growth of ZnSe and ZnCdSe nanowires is demonstrated by molecular beam epitaxy using Au or Ag catalyst films in the temperature range 400-550 oC. The highest density of small-diameter (10 nm), highly-crystalline ZnSe nanowires is achieved by using Au at 400 oC. Direct growth onto transmission electron microscope grids clearly indicates a tip-growth regime. Pre-patterning of the catalyst film allows highly selective ZnSe deposition as probed by photoluminescence and Raman spectroscopy. In similar conditions, the addition of Cd vapour in the MBE reactor allows the synthesis of ZnCdSe ternary nanowires. (literal)
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