http://www.cnr.it/ontology/cnr/individuo/prodotto/ID174777
Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy (Articolo in rivista)
- Type
- Label
- Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1088/0957-4484/16/5/001 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- A Colli; S Hofmann;A C Ferrari; F Martelli; S Rubini;
C Ducati; A Franciosi; J Robertson; (literal)
- Pagina inizio
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, UK
Laboratorio Nazionale TASC-INFM, Area Science Park, 34012 Trieste, Italy
Department ofMaterials Science andMetallurgy, University of Cambridge, Cambridge, UK
Dipartimento di Fisica, Universita' di Trieste, 34127 Trieste, Italy (literal)
- Titolo
- Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy (literal)
- Abstract
- Controlled growth of ZnSe and ZnCdSe nanowires is demonstrated by
molecular beam epitaxy using Au or Ag catalyst films in the temperature
range 400-550 oC. The highest density of small-diameter (10 nm),
highly-crystalline ZnSe nanowires is achieved by using Au at 400 oC. Direct
growth onto transmission electron microscope grids clearly indicates a
tip-growth regime. Pre-patterning of the catalyst film allows highly selective
ZnSe deposition as probed by photoluminescence and Raman spectroscopy.
In similar conditions, the addition of Cd vapour in the MBE reactor allows
the synthesis of ZnCdSe ternary nanowires. (literal)
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- Autore CNR
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