http://www.cnr.it/ontology/cnr/individuo/prodotto/ID174775
InAsN/GaAsN
quantum-dot and InGaNAs/GaAs quantum-well emitters: A comparison (Articolo in rivista)
- Type
- Label
- InAsN/GaAsN
quantum-dot and InGaNAs/GaAs quantum-well emitters: A comparison (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.1944899 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- G. Bais; A. Cristofoli; F. Jabeen; M. Piccin; E. Carlino; S. Rubini; F. Martelli;
A. Franciosi (literal)
- Pagina inizio
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Laboratorio Nazionale TASC-INFM, Area Science Park, 34012 Trieste, Italy and Center of Excellence for
Nanostructured Materials, University of Trieste, 34127 Trieste, Italy (literal)
- Titolo
- InAsN/GaAsN
quantum-dot and InGaNAs/GaAs quantum-well emitters: A comparison (literal)
- Abstract
- We compare the luminescence from InAsN/GaAs and InAsN/GaAsN quantum dots with that
obtained from InGaNAsN/GaAs quantum wells grown in the same experimental system. All
structures were engineered to emit near 1.3 mm at room temperature. Quantum-dot emitters were
found to exhibit higher thermal stability and did not require postgrowth annealing. The use of
GaAsN barriers as opposed to GaAs barriers provided for narrower and more intense quantum-dot
luminescence. (literal)
- Autore CNR
Incoming links:
- Autore CNR di
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
