Growth of III-V semiconductor nanowires by molecular beam epitaxy (Articolo in rivista)

Type
Label
  • Growth of III-V semiconductor nanowires by molecular beam epitaxy (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.mejo.2008.06.001 (literal)
Alternative label
  • F. Jabeen; S. Rubini; F. Martelli (2009)
    Growth of III-V semiconductor nanowires by molecular beam epitaxy
    in Microelectronics journal
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • F. Jabeen; S. Rubini; F. Martelli (literal)
Pagina inizio
  • 442 (literal)
Pagina fine
  • 445 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 40 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • TASC-INFM-CNR, Trieste, Italy (literal)
Titolo
  • Growth of III-V semiconductor nanowires by molecular beam epitaxy (literal)
Abstract
  • We present here the growth of GaAs, InAs and InGaAs nanowires by molecular beam epitaxy. The nanowires have been grown on different substrates [GaAs(0 01), GaAs(111), SiO2 and Si(111)] using gold as the growth catalyst. We show how the different substrates affect the results in terms of nanowire density and morphology. We also show that the growth temperature for the InGaAs nanowires has to be carefully chosen to obtain homogeneous alloys. (literal)
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