B activation and clustering in ion-implanted Ge (Articolo in rivista)

Type
Label
  • B activation and clustering in ion-implanted Ge (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3091289 (literal)
Alternative label
  • Impellizzeri G.; Mirabella S.; Bruno E.; Piro A. M.; Grimaldi M. G. (2009)
    B activation and clustering in ion-implanted Ge
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Impellizzeri G.; Mirabella S.; Bruno E.; Piro A. M.; Grimaldi M. G. (literal)
Pagina inizio
  • 063533-1 (literal)
Pagina fine
  • 063533-6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://dx.doi.org/10.1063/1.3091289 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 105 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • MATIS CNR-INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy (literal)
Titolo
  • B activation and clustering in ion-implanted Ge (literal)
Abstract
  • Experimental studies about electrical activation and clustering of B implanted in crystalline Ge (c-Ge) are reported. To this aim, we structurally and electrically investigated c-Ge samples implanted at different temperatures with B at 35 keV in the high-concentration dopant regime (0.67-25E20 B/cm3). We elucidated that a high level of damage, in the form of amorphous pockets, favors the electrical activation of the dopant, and a complete activation was achieved for properly chosen implant conditions. We found, by joining channeling measurements with the electrical ones, that the reason for incomplete B activation is the formation of B-Ge complexes with a well-defined stoichiometry of 1:8. The thermal stability of the B-doped samples, up to 550 °C, was also investigated. The tested stability demonstrates that the B clustering, responsible of B inactivity, is characterized by high binding energies and higher thermal budgets are needed to make them to dissolve. These studies, besides clarify the physical mechanisms by which B dopes Ge, can be helpful for the realization of ultrashallow junctions for the future generation devices. (literal)
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