http://www.cnr.it/ontology/cnr/individuo/prodotto/ID174386
Fluorine in Si: native-defects complexes and the suppression of impurity diffusion (Articolo in rivista)
- Type
- Label
- Fluorine in Si: native-defects complexes and the suppression of impurity diffusion (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1103/PhysRevB.72.045219 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Lopez G. M. (1); Fiorentini V. (1); Impellizzeri G. (2); Mirabella S. (2); Napolitani E. (3) (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://link.aps.org/doi/10.1103/PhysRevB.72.045219 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- (1) SLACS-INFM, Sardinian Laboratory for Computational Materials Science, and Dipartimento di Fisica, Università di Cagliari, Cittadella
Universitaria, I-09042 Monserrato (CA), Italy
(2) MATIS-INFM and Dipartimento di Fisica ed Astronomia, Università di Catania, via S. Sofia 64, I-95123 Catania, Italy
(3) MATIS-INFM and Dipartimento di Fisica, Università di Padova, via Marzolo 8, I-35131 Padova, Italy (literal)
- Titolo
- Fluorine in Si: native-defects complexes and the suppression of impurity diffusion (literal)
- Abstract
- The transient enhanced diffusion of acceptor impurities severely affects the realization of ultrahigh doping
regions in miniaturized Si-based devices. Fluorine codoping has been found to suppress this transient diffusion,
but the mechanism underlying this effect is not understood. It has been proposed that fluorine-impurity or
fluorine-native-defect interactions may be responsible. Here we clarify this mechanism combining firstprinciples
theoretical studies of fluorine in Si and purposely designed experiments on Si structures containing
boron and fluorine. The central interaction mechanism is the preferential binding of fluorine to Si-vacancy
dangling bonds and the consequent formation of vacancy-fluorine complexes. The latter effectively act as traps
for the excess self-interstitials that would normally cause boron transient enhanced diffusion. Instead, fluorineboron
interactions are marginal and do not play any significant role. Our results are also consistent with other
observations such as native-defect trapping and bubble formation. (literal)
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