Fluorine in Si: native-defects complexes and the suppression of impurity diffusion (Articolo in rivista)

Type
Label
  • Fluorine in Si: native-defects complexes and the suppression of impurity diffusion (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.72.045219 (literal)
Alternative label
  • Lopez G. M. (1); Fiorentini V. (1); Impellizzeri G. (2); Mirabella S. (2); Napolitani E. (3) (2005)
    Fluorine in Si: native-defects complexes and the suppression of impurity diffusion
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lopez G. M. (1); Fiorentini V. (1); Impellizzeri G. (2); Mirabella S. (2); Napolitani E. (3) (literal)
Pagina inizio
  • 045219-1 (literal)
Pagina fine
  • 045219-7 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://link.aps.org/doi/10.1103/PhysRevB.72.045219 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 72 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 7 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) SLACS-INFM, Sardinian Laboratory for Computational Materials Science, and Dipartimento di Fisica, Università di Cagliari, Cittadella Universitaria, I-09042 Monserrato (CA), Italy (2) MATIS-INFM and Dipartimento di Fisica ed Astronomia, Università di Catania, via S. Sofia 64, I-95123 Catania, Italy (3) MATIS-INFM and Dipartimento di Fisica, Università di Padova, via Marzolo 8, I-35131 Padova, Italy (literal)
Titolo
  • Fluorine in Si: native-defects complexes and the suppression of impurity diffusion (literal)
Abstract
  • The transient enhanced diffusion of acceptor impurities severely affects the realization of ultrahigh doping regions in miniaturized Si-based devices. Fluorine codoping has been found to suppress this transient diffusion, but the mechanism underlying this effect is not understood. It has been proposed that fluorine-impurity or fluorine-native-defect interactions may be responsible. Here we clarify this mechanism combining firstprinciples theoretical studies of fluorine in Si and purposely designed experiments on Si structures containing boron and fluorine. The central interaction mechanism is the preferential binding of fluorine to Si-vacancy dangling bonds and the consequent formation of vacancy-fluorine complexes. The latter effectively act as traps for the excess self-interstitials that would normally cause boron transient enhanced diffusion. Instead, fluorineboron interactions are marginal and do not play any significant role. Our results are also consistent with other observations such as native-defect trapping and bubble formation. (literal)
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