http://www.cnr.it/ontology/cnr/individuo/prodotto/ID174383

Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy (Articolo in rivista)

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Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy (Articolo in rivista) (literal)

Anno

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Alternative label

M. Bollani, D. Chrastina, V. Montuori, D. Terziotti, E. Bonera, G.M. Vanacore, A. Tagliaferri, R. Sordan, C. Spinella, G. Nicotra (2012)
Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy
in Nanotechnology (Bristol. Print)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

M. Bollani, D. Chrastina, V. Montuori, D. Terziotti, E. Bonera, G.M. Vanacore, A. Tagliaferri, R. Sordan, C. Spinella, G. Nicotra (literal)

Pagina inizio

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http://scienceserver.cilea.it/cgi-bin/sciserv.pl?collection=journals&journal=09574484&issue=v23i0004 (literal)

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Note

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L NESS, CNR IFN, I-22100 Como, Italy; L NESS Politecn Milano, Dipartimento Fis, I-22100 Como, Italy; Univiversità Milano Bicocca, Dipartimento Scienze Materiali, I-20125 Milan, Italy; IMM CNR, I-95121 Catania, Italy. (literal)

Titolo

Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy (literal)

Abstract

The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe. (literal)

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