Photovoltaic conversion efficiency evaluation of In2O3-SnO2 multilayered thin-films deposited on silicon substrates by reactive pulsed laser ablation (Abstract/Poster in atti di convegno)

Type

• Abstract/Poster in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Photovoltaic conversion efficiency evaluation of In2O3-SnO2 multilayered thin-films deposited on silicon substrates by reactive pulsed laser ablation (Abstract/Poster in atti di convegno) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Alternative label

• D.M. TRUCCHI; V. MAROTTA; S. ORLANDO Trucchi D.M., Zanza A., Bellucci A., Marotta V., Orlando S. (2009)
  Photovoltaic conversion efficiency evaluation of In2O3-SnO2 multilayered thin-films deposited on silicon substrates by reactive pulsed laser ablation
  in EMRS 2009 - Symposium H, Strasbourg (France)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• D.M. TRUCCHI; V. MAROTTA; S. ORLANDO Trucchi D.M., Zanza A., Bellucci A., Marotta V., Orlando S. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• EMRS 2009 - European Materials Research Society, Symposium H : Bulk amorphous and nanocrystalline materials, Strasbourg, France, June 8 - 12, 2009. Bulk amorphous and nanocrystalline materials. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto

• Reactive Pulsed Laser Ablation (RPLA), relying on photoablation of pure elements and/or a mixture of materials in a reactive atmosphere, is a powerful technique to produce thin-films. In the case of oxides, reactions between the laser-vaporized metals and oxygen lead to the formation of intermediate complexes and finally to oxide thin-films. Thin-films of semiconducting oxides such as In2O3, SnO2, and multilayers of these two compounds have been deposited by RPLA, with the aim to evaluate their photovoltaic efficiency. Deposition of these thin-films has been carried out by a doubled frequency Nd-YAG laser (532 nm) on Silicon (100) substrates. A comparison among indium oxide, tin oxide, and multilayers of them has been performed in terms of photovoltaic conversion efficiency under halogen lamp illumination. The photoconductive capability as a function of deposition parameters (substrate temperature, laser fluence, and oxygen pressure) and film structure (thickness, number of layers) have been investigated. The influence of film physical properties has been correlated to photovoltaic parameters (open-circuit voltage, short circuit current, conversion efficiency). (literal)

Titolo

• Photovoltaic conversion efficiency evaluation of In2O3-SnO2 multilayered thin-films deposited on silicon substrates by reactive pulsed laser ablation (literal)

Prodotto di

• Interazione Laser Materia (MD.P03.030.001) (Modulo)
• Crescita e funzionalità di materiali e sistemi complessi a base carbonio (MD.P02.005.001) (Modulo)
• Istituto di Nanotecnologia (NANOTEC) (Istituto)

Autore CNR

• STEFANO ORLANDO (Unità di personale interno)
• IDA VERONICA MAROTTA (Persona)
• DANIELE MARIA TRUCCHI (Persona)

Insieme di parole chiave

• Keywords of "Photovoltaic conversion efficiency evaluation of In2O3-SnO2 multilayered thin-films deposited on silicon substrates by reactive pulsed laser ablation" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Crescita e funzionalità di materiali e sistemi complessi a base carbonio (MD.P02.005.001) (Modulo)
• Interazione Laser Materia (MD.P03.030.001) (Modulo)

Autore CNR di

• DANIELE MARIA TRUCCHI (Persona)
• IDA VERONICA MAROTTA (Persona)
• STEFANO ORLANDO (Unità di personale interno)

Insieme di parole chiave di

• Keywords of "Photovoltaic conversion efficiency evaluation of In2O3-SnO2 multilayered thin-films deposited on silicon substrates by reactive pulsed laser ablation" (Insieme di parole chiave)