Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications (Contributo in atti di convegno)

Type
Label
  • Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications (Contributo in atti di convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Molas G, Bocquet M, Buckley J, Colonna JP, Masarotto L, Grampeix H, Martin F, Vidal V, Toffoli A, Brianceau P, Vermande L, Scheiblin P, Gely M, Papon AM, Auvert G, Perniola L, Licitra C, Veyron T, Rochat N, Bongiorno C, Lombardo S, De Salvo B, Deleonibus (2007)
    Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications
    in International Electron Devices Meeting, 2007. IEDM '07, Washington DC, USA
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Molas G, Bocquet M, Buckley J, Colonna JP, Masarotto L, Grampeix H, Martin F, Vidal V, Toffoli A, Brianceau P, Vermande L, Scheiblin P, Gely M, Papon AM, Auvert G, Perniola L, Licitra C, Veyron T, Rochat N, Bongiorno C, Lombardo S, De Salvo B, Deleonibus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CEA-LETI Grenoble; IMM-CNR Catania (literal)
Titolo
  • Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications (literal)
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