Time-resolved gain dynamics in silicon nanocrystals (Contributo in atti di convegno)

Type
Label
  • Time-resolved gain dynamics in silicon nanocrystals (Contributo in atti di convegno) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Dal Negro L, Cazzanelli M, Daldosso N, Pavesi L, Priolo F, Franzò G, Pacifici D, Iacona F (2003)
    Time-resolved gain dynamics in silicon nanocrystals
    in Materials Research Society Spring Meeting, San Francisco (USA), 21-24 Aprile 2003
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Dal Negro L, Cazzanelli M, Daldosso N, Pavesi L, Priolo F, Franzò G, Pacifici D, Iacona F (literal)
Pagina inizio
  • 69 (literal)
Pagina fine
  • 74 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • OPTOELECTRONICS OF GROUP-IV-BASED MATERIALS (literal)
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  • 770 (literal)
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  • 770 (literal)
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  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • 1 INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento) 2 INFM-Dipartimento di Fisica, Università di Catania, Corso Italia 57, I-95129 Catania, Italia 3 CNR-IMM, Sezione di Catania, Stradale Primosole 50, I-95121 Catania, Italia (literal)
Titolo
  • Time-resolved gain dynamics in silicon nanocrystals (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 1-55899-707-5 (literal)
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  • Gregorkiewicz, T; Elliman, RG; Fauchet, PM; Hutchby, JA (literal)
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  • Gregorkiewicz, T; Elliman, RG; Fauchet, PM; Hutchby, JA (literal)
Abstract
  • Time-resolved variable stripe length (VSL) experiments on a set of silicon nanocrystal waveguides obtained by plasma enhanced chemical vapor deposition (PECVD) have revealed a fast recombination dynamics (20 ns) related to population inversion under 6 ns optical pumping at 355 nm. Modal gain values about 10 cm(-1) have been measured at 760 run by VSL technique for the fast recombination component while optical losses about 15 cm(-1) are measured for the integrated signal in the slow (lifetime of about 10 mus) recombination tail. Threshold behavior in the emission intensity together with a pumping length and pumping power dependence of both the intensity and the time duration of the fast recombination component has been observed. These results are explained within an effective four level model to describe the strong competition among different Auger processes and stimulated emission. (literal)
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