Spatially localized UV-induced crystallization of SnO2 in photorefractive SiO2-SnO2 thin film (Contributo in atti di convegno)

Type
Label
  • Spatially localized UV-induced crystallization of SnO2 in photorefractive SiO2-SnO2 thin film (Contributo in atti di convegno) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1117/12.854894 (literal)
Alternative label
  • B.N. Shivakiran Bhaktha, Simone Berneschi, Gualtiero Nunzi Conti, Giancarlo C. Righini, Andrea Chiappini, Alessandro Chiasera, Maurizio Ferrari, Sylvia Turrell (2010)
    Spatially localized UV-induced crystallization of SnO2 in photorefractive SiO2-SnO2 thin film
    in SPIE Photonics Europe Conference 7719 Silicon Photonics and Photonic Integrated Circuits, Brussels, Belgium, April 12, 2010
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • B.N. Shivakiran Bhaktha, Simone Berneschi, Gualtiero Nunzi Conti, Giancarlo C. Righini, Andrea Chiappini, Alessandro Chiasera, Maurizio Ferrari, Sylvia Turrell (literal)
Pagina inizio
  • 77191B-1 (literal)
Pagina fine
  • 77191B-5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 7719 (literal)
Rivista
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  • Proceedings of SPIE Vol. 7719 (2010) pp. 77191B-1/5. doi: 10.1117/12.854894 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • We report on the formation of spatially localized crystals in SiO2–SnO2 thin films fabricated by the sol-gel technique. This material presents an intense absorption band (± H 10^3 cm-1) in the UV region. A continuous wave UV laser operating at 266 nm focused through a microscope objective is used as an effective tool to modify locally the matrix containing photorefractive SnO2. The UV micro-Raman spectrometer is used to study the evolution of SnO2 crystals in the thin film. The appearance of the Raman scattering peak at 621 cm-1, assigned to the A1g mode of rutile SnO2, confirms the formation of nanocrystals in the focalised UV irradiated zone. (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • B. N. Shivakiran Bhaktha [Laboratoire de Physique de la Matière Condensée, CNRS UMR 6622, Université de Nice–Sophia Antipolis, Parc Valrose, 06108 Nice Cedex 02, France]; Simone Berneschi, Gualtiero Nunzi Conti, Giancarlo C. Righini [IFAC- CNR, “Nello Carrara” Institute of Applied Physics, MDF Lab., via Madonna del Piano 10, 50019 Sesto Fiorentino, Italy.] Andrea Chiappini, Alessandro Chiasera, Maurizio Ferrari [IFN-CNR, Institute of Photonics & Nanotechnology, CSMFO Lab., Via alla Cascata 56/c, Povo, 38123 Trento, Italy]; Sylvia Turrell [LASIR (CNRS, UMR 8516) and CERLA, Université Lille 1, Sciences et Technologies 59655 Villeneuve d’Ascq, France] (literal)
Titolo
  • Spatially localized UV-induced crystallization of SnO2 in photorefractive SiO2-SnO2 thin film (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 9780819481924 (literal)
Abstract
  • We report on the formation of spatially localized crystals in SiO 2-SnO2 thin films fabricated by the sol-gel technique. This material presents an intense absorption band (??10 3cm-1) in the UV region. A continuous wave UV laser operating at 266nm focused through a microscope objective is used as an effective tool to modify locally the matrix containing photorefractive SnO 2. The UV micro-Raman spectrometer is used to study the evolution of SnO2 crystals in the thin film. The appearance of the Raman scattering peak at 621cm-1, assigned to the A1g mode of rutile SnO2, confirms the formation of nanocrystals in the focalised UV irradiated zone. © 2010 Copyright SPIE - The International Society for Optical Engineering. (literal)
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