http://www.cnr.it/ontology/cnr/individuo/prodotto/ID173707
Spatially localized UV-induced crystallization of SnO2 in photorefractive SiO2-SnO2 thin film (Contributo in atti di convegno)
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- Spatially localized UV-induced crystallization of SnO2 in photorefractive SiO2-SnO2 thin film (Contributo in atti di convegno) (literal)
- Anno
- 2010-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1117/12.854894 (literal)
- Alternative label
B.N. Shivakiran Bhaktha, Simone Berneschi, Gualtiero Nunzi Conti, Giancarlo C. Righini, Andrea Chiappini, Alessandro Chiasera, Maurizio Ferrari, Sylvia Turrell (2010)
Spatially localized UV-induced crystallization of SnO2 in photorefractive SiO2-SnO2 thin film
in SPIE Photonics Europe Conference 7719 Silicon Photonics and Photonic Integrated Circuits, Brussels, Belgium, April 12, 2010
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- B.N. Shivakiran Bhaktha, Simone Berneschi, Gualtiero Nunzi Conti, Giancarlo C. Righini, Andrea Chiappini, Alessandro Chiasera, Maurizio Ferrari, Sylvia Turrell (literal)
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- Proceedings of SPIE Vol. 7719 (2010) pp. 77191B-1/5.
doi: 10.1117/12.854894 (literal)
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- We report on the formation of spatially localized crystals in SiO2SnO2 thin films fabricated by the sol-gel technique. This material presents an intense absorption band (± H 10^3 cm-1) in the UV region. A continuous wave UV laser operating at 266 nm focused through a microscope objective is used as an effective tool to modify locally the matrix containing
photorefractive SnO2. The UV micro-Raman spectrometer is used to study the evolution of SnO2 crystals in the thin film.
The appearance of the Raman scattering peak at 621 cm-1, assigned to the A1g mode of rutile SnO2, confirms the formation of nanocrystals in the focalised UV irradiated zone. (literal)
- Note
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- B. N. Shivakiran Bhaktha [Laboratoire de Physique de la Matière Condensée, CNRS UMR 6622, Université de NiceSophia Antipolis, Parc Valrose, 06108 Nice Cedex 02, France];
Simone Berneschi, Gualtiero Nunzi Conti, Giancarlo C. Righini [IFAC- CNR, Nello Carrara Institute of Applied Physics, MDF Lab., via Madonna del Piano 10, 50019 Sesto Fiorentino, Italy.]
Andrea Chiappini, Alessandro Chiasera, Maurizio Ferrari [IFN-CNR, Institute of Photonics & Nanotechnology, CSMFO Lab., Via alla Cascata 56/c, Povo, 38123 Trento, Italy];
Sylvia Turrell [LASIR (CNRS, UMR 8516) and CERLA, Université Lille 1, Sciences et Technologies 59655 Villeneuve dAscq, France] (literal)
- Titolo
- Spatially localized UV-induced crystallization of SnO2 in photorefractive SiO2-SnO2 thin film (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
- Abstract
- We report on the formation of spatially localized crystals in SiO 2-SnO2 thin films fabricated by the sol-gel technique. This material presents an intense absorption band (??10 3cm-1) in the UV region. A continuous wave UV laser operating at 266nm focused through a microscope objective is used as an effective tool to modify locally the matrix containing photorefractive SnO 2. The UV micro-Raman spectrometer is used to study the evolution of SnO2 crystals in the thin film. The appearance of the Raman scattering peak at 621cm-1, assigned to the A1g mode of rutile SnO2, confirms the formation of nanocrystals in the focalised UV irradiated zone. © 2010 Copyright SPIE - The International Society for Optical Engineering. (literal)
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