http://www.cnr.it/ontology/cnr/individuo/prodotto/ID173634
Program/erase dynamics and channel conduction in nanocrystal memories (Contributo in atti di convegno)
- Type
- Label
- Program/erase dynamics and channel conduction in nanocrystal memories (Contributo in atti di convegno) (literal)
- Anno
- 2003-01-01T00:00:00+01:00 (literal)
- Alternative label
C. Monzio Compagnoni, D. Ielmini, A. S. Spinelli, A. L. Lacaita, C. Gerardi, B. De Salvo, L. Perniola and S. Lombardo Compagnoni CM, Ielmini D, Spinelli AS, Lacaita AL, Gerardi C, Perniola L, De Salvo B, Lombardo S Compagnoni MC, Ielmini D, Spinelli AS, Lacaita AL, Gerardi C, Perniola L, De Salvo B, Lombardo S (2003)
Program/erase dynamics and channel conduction in nanocrystal memories
in International Electron Devices Meeting, 2003. IEDM '03, Washington (USA)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- C. Monzio Compagnoni, D. Ielmini, A. S. Spinelli, A. L. Lacaita, C. Gerardi, B. De Salvo, L. Perniola and S. Lombardo Compagnoni CM, Ielmini D, Spinelli AS, Lacaita AL, Gerardi C, Perniola L, De Salvo B, Lombardo S Compagnoni MC, Ielmini D, Spinelli AS, Lacaita AL, Gerardi C, Perniola L, De Salvo B, Lombardo S (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- 8-10 Dec. 2003, pp. 549-552, IEEE Inc., Piscataway, NJ, ISBN 0-7803-7872-5 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
- We present new models for nanocrystal (NC) memories, addressing program/erase (P/E) transients and carrier conduction in the channel controlled by discrete nodes. The model allows for the calculation of the achievable threshold-voltage (V/sub T/) window and P/E times under uniform tunneling-injection conditions. Comparisons with experimental data are shown, demonstrating that our physically-based model correctly captures the VT dependence on critical cell and bias parameters. The model can be used to draw technological guidelines for window optimization in NC cells. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Dipt. di Elettronica e Informazione, Politecnico di Milano, Italy; STMicroelectronics Catania; IMM-CNR Catania (literal)
- Titolo
- Program/erase dynamics and channel conduction in nanocrystal memories (literal)
- Abstract
- We present new models for nanocrystal (NC) memories, addressing program/erase (P/E) transients and carrier conduction in the channel controlled by discrete nodes. The model allows for the calculation of the achievable threshold-voltage (V/sub T/) window and P/E times under uniform tunneling-injection conditions. Comparisons with experimental data are shown, demonstrating that our physically-based model correctly captures the VT dependence on critical cell and bias parameters. The model can be used to draw technological guidelines for window optimization in NC cells. (literal)
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