Nanostructure and optical properties of CeO2 thin films obtained by plasma-enhanced chemical vapor deposition (Articolo in rivista)

Type
Label
  • Nanostructure and optical properties of CeO2 thin films obtained by plasma-enhanced chemical vapor deposition (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • D. Barreca, G. Bruno, A. Gasparotto, M. Losurdo, E. Tondello (2003)
    Nanostructure and optical properties of CeO2 thin films obtained by plasma-enhanced chemical vapor deposition
    in Materials science & engineering. C, Biomimetic materials, sensors and systems (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • D. Barreca, G. Bruno, A. Gasparotto, M. Losurdo, E. Tondello (literal)
Pagina inizio
  • 1013 (literal)
Pagina fine
  • 1016 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 23 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1: ISTM-CNR and INSTM, Department of Chemistry, University of Padova, via Marzolo, 1, 35131 Padua, Italy 2,4: IMIP-CNR, via Orabona, 4, 70126 Bari, Italy 3,5: Department of Chemistry and INSTM, University of Padova, via Loredan, 4, 35131 Padua, Italy (literal)
Titolo
  • Nanostructure and optical properties of CeO2 thin films obtained by plasma-enhanced chemical vapor deposition (literal)
Abstract
  • In the present study, Spectroscopic Ellipsometry (SE) is used to investigate the interrelations between nanostructure and optical properties of CeO2 thin films deposited by Plasma-Enhanced Chemical Vapor Deposition (PE-CVD). The layers were synthesized in Ar and Ar-O2 plasmas on Si(100) substrates at temperatures lower than 300 jC. Both the real and imaginary parts of the complex dielectric functions and, subsequently, the optical constants of the films are derived up to 6.0 eV photon energy. Particular attention is devoted to the influence of synthesis conditions and sample properties on the optical response, taking into account the effects of surface roughness and SiO2 interface layer on Si. (literal)
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