Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells (Articolo in rivista)

Type
Label
  • Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.82.205317 (literal)
Alternative label
  • Busby Y.; De Seta M.; Capellini G.; Evangelisti F.; Ortolani M.; Virgilio M.; Grosso G.; Pizzi G.; Calvani P.; Lupi S.; Nardone M.; Nicotra G.; Spinella C. (2010)
    Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Busby Y.; De Seta M.; Capellini G.; Evangelisti F.; Ortolani M.; Virgilio M.; Grosso G.; Pizzi G.; Calvani P.; Lupi S.; Nardone M.; Nicotra G.; Spinella C. (literal)
Pagina inizio
  • 205317 (literal)
Pagina fine
  • 205317 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://prb.aps.org/pdf/PRB/v82/i20/e205317 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 82 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 11 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 20 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Univ Roma Tre, Dipartimento Fis, I-00146 Rome, Italy 2. CNR, Ist Foton & Nanotecnol, I-00156 Rome, Italy 3. Univ Pisa, Dipartimento Fis E Fermi, I-56127 Pisa, Italy 4. CNR, Ist Nanosci, NEST, I-56127 Pisa, Italy 5. Scuola Normale Super Pisa, CNRS, Ist Nanosci, NEST, I-56126 Pisa, Italy 6. Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy 7. CNR SPIN, I-00185 Rome, Italy 8. CNR IOM, I-00185 Rome, Italy 9. Univ Aquila, Dipartimento Fis, I-67100 Coppito, Italy 10. Univ Aquila, CNISM CNR, I-67100 Coppito, Italy 11. CNR IMM, I-95121 Catania, Italy (literal)
Titolo
  • Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells (literal)
Abstract
  • We report an extensive study of strained Ge/Si0.2Ge0.8 multiquantum wells grown by ultrahigh-vacuum chemical-vapor deposition. The microstructural properties of the samples were characterized by transmission electron microscopy and Raman spectroscopy. Their electronic properties have been investigated by means of infrared absorption measurements. Both interband and intersubband transitions were analyzed. Intersubband absorption energies were found in the 20-50 meV range, depending on the quantum well width. Interband and intersubband transition energies have been successfully described by means of both a k . p approach and a tight-binding model. In particular, we found a conduction-band offset between the L edges of 124 meV, well suited for the development of optoelectronic devices operating in the terahertz range. We also found that the energy difference between the Delta(2) minima in the barrier and the L minima in the well is only similar to 40 meV. This explains the observed ineffectiveness of the transfer doping in the strained heterostructures considered. (literal)
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