Thermal oxidation of Si (001) single crystal implanted with Ge ions (Articolo in rivista)

Type
Label
  • Thermal oxidation of Si (001) single crystal implanted with Ge ions (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Alternative label
  • Terrasi A., Scalese S., Re M., Rimini E., Iacona F., Raineri V., La Via F., Colonna S., Mobilio S. (2002)
    Thermal oxidation of Si (001) single crystal implanted with Ge ions
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Terrasi A., Scalese S., Re M., Rimini E., Iacona F., Raineri V., La Via F., Colonna S., Mobilio S. (literal)
Pagina inizio
  • 6754 (literal)
Pagina fine
  • 6760 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 91 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dipartimento di Fisica Università di Catania, CNR-ISM, CNR-IMM (literal)
Titolo
  • Thermal oxidation of Si (001) single crystal implanted with Ge ions (literal)
Abstract
  • The thermal oxidation of Ge-implanted Si single crystals has been investigated for different Ge doses (3x1015 cm-2 and 3x1016 cm-2) and different oxidation processes (in wet ambient at 920 °C for 30, 60 and 120 minutes, or dry ambient at 1100 °C for 30 minutes). The oxide roughness, the oxidation rate, the Ge diffusion, precipitation and clustering, have been followed by several experimental techniques: atomic force microscopy, transmission electron microscopy, Rutherford backscattering spectrometry and X-ray absorption spectroscopy. We found that the surface roughness is related to the segregation of Ge at the oxide/substrate interface, occurring when the oxidation rate is faster than the Ge diffusion, in particular at the higher implanted dose (3x1016 cm-2) processed in wet ambient. In these conditions we also observed the oxidation rate enhancement with respect to pure Si and a strong indication that pure Ge clusters have been formed. When a critical Ge concentration at the interface is reached, the oxidation mechanisms changes and a lowering of the oxidation rate is found, along with an evident Ge diffusion into the substrate and a consequent reduction of the Ge fraction at the interface. Nevertheless, the oxide roughness still increases despite of the Ge concentration reduction, keeping memory of initial nucleation of precipitates. (literal)
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