Program / erase characteristics of ultra-scaled Si Nanocrystal FINFLASH memories (Contributo in atti di convegno)

Type
Label
  • Program / erase characteristics of ultra-scaled Si Nanocrystal FINFLASH memories (Contributo in atti di convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Lombardo S, Gerardi C, Corso D, Cina’ G, Tripiciano E, Ancarani V, Bongiorno C, Rimini E, Melanotte M (2007)
    Program / erase characteristics of ultra-scaled Si Nanocrystal FINFLASH memories
    in International Conference on Memory Technology and Design, Peninsula of Giens (France)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lombardo S, Gerardi C, Corso D, Cina’ G, Tripiciano E, Ancarani V, Bongiorno C, Rimini E, Melanotte M (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM Catania; STMicroelectronics Catania (literal)
Titolo
  • Program / erase characteristics of ultra-scaled Si Nanocrystal FINFLASH memories (literal)
Abstract
  • Si nanocrystal FINFLASH memory cells were realized on SOI substrates. Ultra-scaled devices down to 20 nm fin width exhibit excellent program / erase characteristics at low voltage. The main results are shown and discussed. (literal)
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