http://www.cnr.it/ontology/cnr/individuo/prodotto/ID172390
Thiophene-benzothiadiazole co-oligomers: synthesis, optoelectronic properties, electrical characterization and thin film patterning (Articolo in rivista)
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- Thiophene-benzothiadiazole co-oligomers: synthesis, optoelectronic properties, electrical characterization and thin film patterning (Articolo in rivista) (literal)
- Anno
- 2010-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1002/adfm.200901424 (literal)
- Alternative label
M. Melucci, L. Favaretto, M. Cavallini, A. Zanelli, A. Bongini, P. Maccagnani, P. Ostoja, G. Dereu, R. Lazzaroni, G. Barbarella (2010)
Thiophene-benzothiadiazole co-oligomers: synthesis, optoelectronic properties, electrical characterization and thin film patterning
in Advanced functional materials (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- M. Melucci, L. Favaretto, M. Cavallini, A. Zanelli, A. Bongini, P. Maccagnani, P. Ostoja, G. Dereu, R. Lazzaroni, G. Barbarella (literal)
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- DOI: 10.1002/adfm.200901424 (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1. CNR, ISOF, I-40129 Bologna, Italy
2. CNR, ISMN, I-40129 Bologna, Italy
3. Univ Bologna, Dipartimento Chim G Ciamician, I-40122 Bologna, Italy
4. CNR, IMM, I-40129 Bologna, Italy
5. Univ Mons, Serv Chim Mat Nouveaux, B-7000 Mons, Belgiumgium (literal)
- Titolo
- Thiophene-benzothiadiazole co-oligomers: synthesis, optoelectronic properties, electrical characterization and thin film patterning (literal)
- Abstract
- Newly synthesized thiophene (T) and benzothiadiazole (B) co-oligomers of different size, alternation motifs, and alkyl substitution types are reported. Combined spectroscopic data, electrochemical analysis, and theoretical calculations show that the insertion of a single electron-deficient B unit into the aromatic backbone strongly affects the LUMO energy level. The insertion of additional B units has only a minor effect on the electronic properties. Cast films of oligomers with two alternated B rings (B-T-B inner core) display crystalline order. Bottom-contact FETs based on films cast on bare SiO2 show hole-charge mobilities of 1 x 10(-3)-5 x 10(-3) cm(2) V-1 s(-1) and I-on/I-off ratios of 10(5)-10(6). Solution-cast films of cyclohexyl-substituted compounds are amorphous and do not show FET behavior. However, the lack of order observed in these films can be overcome by nanorubbing and unconventional wet lithography, which allow for fine control of structural order in thin deposits. (literal)
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