Alternative Materials for RF MEMS Switches in III-V Technology (Contributo in atti di convegno)

Type
Label
  • Alternative Materials for RF MEMS Switches in III-V Technology (Contributo in atti di convegno) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Persano A, Quaranta F, Cola A, Martucci MC, Cretì P, Taurino A, Siciliano P, Marcelli R, De Angelis G, Lucibello A (2010)
    Alternative Materials for RF MEMS Switches in III-V Technology
    in Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2010, Siviglia, May 5-7, 2010
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Persano A, Quaranta F, Cola A, Martucci MC, Cretì P, Taurino A, Siciliano P, Marcelli R, De Angelis G, Lucibello A (literal)
Pagina inizio
  • 295 (literal)
Pagina fine
  • 298 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • Proceedings of Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2010 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR, Institute for Microelectronics and Microsystems, Unit of Lecce; IMM-CNR, Institute for Microelectronics and Microsystems, Unit of Roma (literal)
Titolo
  • Alternative Materials for RF MEMS Switches in III-V Technology (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-2-35500-011-9 (literal)
Abstract
  • In this work we develop surface-micromachined RF MEMS switches in III-V technology making use of materials which can be alternative to the ones commonly used. In this way, some technological constraints concerning RF MEMS reliability can be overcome. Specifically, we evaluate the potential of tantalum nitride (TaN) and tantalum pentoxide (Ta2O5) to be used for the switches actuation pads and dielectric layers, respectively. To this scope, a compositional, structural and electrical characterization of TaN and Ta2O5 films as a function of the deposition parameters (temperature, sputtering mixture composition, and film thickness) is performed. Both shunt and series switches are prepared and show good switching capabilities by a preliminary analysis. The complete device characterization is in progress and will be presented. (literal)
Editore
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Editore di
Insieme di parole chiave di
data.CNR.it