Thermal annealing effects on the interface state density of metal-oxide-semiconductor capacitors with electron cyclotron resonance plasma enhanced chemical vapor deposition Silicon dioxide (Articolo in rivista)

Type
Label
  • Thermal annealing effects on the interface state density of metal-oxide-semiconductor capacitors with electron cyclotron resonance plasma enhanced chemical vapor deposition Silicon dioxide (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Maiolo L, Pecora A, Cuscunà M, Fortunato G (2007)
    Thermal annealing effects on the interface state density of metal-oxide-semiconductor capacitors with electron cyclotron resonance plasma enhanced chemical vapor deposition Silicon dioxide
    in Thin solid films (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Maiolo L, Pecora A, Cuscunà M, Fortunato G (literal)
Pagina inizio
  • 7590 (literal)
Pagina fine
  • 7593 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 515 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR Roma (literal)
Titolo
  • Thermal annealing effects on the interface state density of metal-oxide-semiconductor capacitors with electron cyclotron resonance plasma enhanced chemical vapor deposition Silicon dioxide (literal)
Abstract
  • Silicon dioxide films NOD, deposited at room temperature by electron cyclotron resonance (ECR) plasma reactor from a gas phase combination of O-2, SiH4 and He, present excellent structural and electrical properties. However, when fabricating field effect devices it is also crucial to minimize the defect density at the semiconductor/insulator interface. We show that the interface state density, investigated in Al/SiO2/Si MOS capacitors, can be substantially reduced performing post-deposition annealing. In particular we studied the effects of annealing temperature and time in different gas ambient: vacuum, nitrogen and forming gas (5% H-2+N-2). We found that interface state passivation mainly occurs when thermal annealing is performed after Al-contact deposition and that it is quite insensitive to the annealing atmosphere. The present results clearly suggest that the hydrogen passivation mechanism is driven by the H-containing species present in the film and a possible mechanism to explain the results is proposed. (literal)
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