AlGaN/GaN Heterostructure Transistors for the Generation and Detection of THz Radiation (Contributo in atti di convegno)

Type
Label
  • AlGaN/GaN Heterostructure Transistors for the Generation and Detection of THz Radiation (Contributo in atti di convegno) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • E. Giovine, A. Di Gaspare, M. Ortolani, F. Evangelisti, V. Foglietti, A. Cetronio, D. Dominijanni, C. Lanzieri, M. Peroni, A. Doria, E. Giovenale, I. Spassovsky, G.P. Gallerano (2010)
    AlGaN/GaN Heterostructure Transistors for the Generation and Detection of THz Radiation
    in IEEE Proc. of the 35th international conference on infrared millimetre and terahertz waves IRMMW-THz 2010
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • E. Giovine, A. Di Gaspare, M. Ortolani, F. Evangelisti, V. Foglietti, A. Cetronio, D. Dominijanni, C. Lanzieri, M. Peroni, A. Doria, E. Giovenale, I. Spassovsky, G.P. Gallerano (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Ist. di Fotonica e Nanotecnol., CNR, Rome, Italy (literal)
Titolo
  • AlGaN/GaN Heterostructure Transistors for the Generation and Detection of THz Radiation (literal)
Abstract
  • he AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave power amplifiers, which can serve as integrated power source for THz frequency multipliers. Here we discuss the operation of AlGaN/GaN transistors as THz detector, which provides information on the behavior of the electron system at THz frequencies. (literal)
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