The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2126144 (literal)

Alternative label

• Monakhov E.V., Svensson B.G., Linnarsson M.K., La Magna A., Italia M., Privitera V., Fortunato G., Cuscuna M., Mariucci L. (2005)
  The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Monakhov E.V., Svensson B.G., Linnarsson M.K., La Magna A., Italia M., Privitera V., Fortunato G., Cuscuna M., Mariucci L. (literal)

Pagina inizio

• 192109 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 87 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Oslo, Dept Phys, N-0316 Oslo, Norway; Royal Inst Technol, Lab Mat & Semicond Phys, SE-16440 Kista, Sweden; CNR, IMM Sez Catania, I-95121 Catania, Italy; CNR, IFN, I-00156 Rome, Italy (literal)

Titolo

• The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon (literal)

Abstract

• We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of similar to 4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)
• Processi laser per dispostivi a semiconduttore (MD.P05.001.003) (Modulo)
• Istituto di fotonica e nanotecnologie (IFN) (Istituto)

Autore CNR

• GUGLIELMO FORTUNATO (Persona)
• ANTONINO LA MAGNA (Persona)
• LUIGI MARIUCCI (Unità di personale interno)
• VITTORIO PRIVITERA (Persona)
• MARKUS ITALIA (Persona)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)
• MARKUS ITALIA (Persona)
• GUGLIELMO FORTUNATO (Persona)
• LUIGI MARIUCCI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)
• Processi laser per dispostivi a semiconduttore (MD.P05.001.003) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)