http://www.cnr.it/ontology/cnr/individuo/prodotto/ID171829
Real time investigation of the growth of silicon carbide nanocrystals on Si (100) using synchroton X-ray diffraction (Articolo in rivista)
- Type
- Label
- Real time investigation of the growth of silicon carbide nanocrystals on Si (100) using synchroton X-ray diffraction (Articolo in rivista) (literal)
- Anno
- 2008-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.apsusc.2007.09.004 (literal)
- Alternative label
S. Milita; M. De Santis; D. Jones; A. Parisini; V. Palermo (2008)
Real time investigation of the growth of silicon carbide nanocrystals on Si (100) using synchroton X-ray diffraction
in Applied surface science; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- S. Milita; M. De Santis; D. Jones; A. Parisini; V. Palermo (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://www.sciencedirect.com/science/article/pii/S0169433207012809 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1. CNR, IMM, I-40129 Bologna, Italy
2. CNRS, Inst Neel, F-38042 Grenoble, France
3. CNR, ISOF, I-40129 Bologna, Italy (literal)
- Titolo
- Real time investigation of the growth of silicon carbide nanocrystals on Si (100) using synchroton X-ray diffraction (literal)
- Abstract
- The growth of silicon carbide nanocrystals on Si(1 0 0) is studied by synchrotron surface X-ray diffraction (SXRD) during annealing at high temperature. A chemisorbed methanol monolayer is used as carbon source, allowing to have a fixed amount of carbon atoms to feed the growth. At room temperature, minor changes in the 2 × 1 reconstruction of silicon are observed due to the formation of Si-O-CH3 and Si-H bonds from methanol molecules. When annealed at 500 °C, carbon incorporation into the silicon leads only to local modifications of the surface structure. Above 600 °C, tri-dimensional silicon carbide nanocrystals growth takes place, together with surface roughening and sharp decrease of domain sizes of the 2 × 1 reconstruction. The different processes taking place at each temperature are clearly distinguished and identified during the real time SXRD measurements. (literal)
- Editore
- Prodotto di
- Autore CNR
Incoming links:
- Prodotto
- Autore CNR di
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Editore di