Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon (Contributo in atti di convegno)

Type

• Prodotto della ricerca (Classe)
• Contributo in atti di convegno (Classe)

Label

• Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon (Contributo in atti di convegno) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Alternative label

• Lulli G., Albertazzi E., Balboni S., Bianconi M. (2003)
  Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon
  in Conference on Applications of Accelerators in Research and Industry, Denton, TX (USA)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Lulli G., Albertazzi E., Balboni S., Bianconi M. (literal)

Pagina inizio

• 381 (literal)

Pagina fine

• 384 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 680 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• Lavoro presentato su invito nel 2002 e pubblicato su proceedings dell' American Insitute of Physics nel 2003 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM (literal)

Titolo

• Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon (literal)

Abstract

• In this work, a new method for the atomistic simulation of ion-channeling spectra for ion irradiated Si is reported. The disordered crystal is represented by a supercell populated with point defects and then relaxed through a static energy minimization procedure based on empirical potentials. By including this supercell in a computer code for the simulation of ion-channeling spectra, we try to reproduce multi-axial results in the slightly damaged surface region of high-energy ion implanted Si. In spite of the simple assumptions on the nature of defects, we find that our method substantially improves the multi-axial data fit in comparison with that obtained under the usual assumption of random point defects. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• EROS ALBERTAZZI (Unità di personale interno)
• MARCO BIANCONI (Persona)
• GIORGIO LULLI (Persona)

Incoming links:

Autore CNR di

• GIORGIO LULLI (Persona)
• MARCO BIANCONI (Persona)
• EROS ALBERTAZZI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)