http://www.cnr.it/ontology/cnr/individuo/prodotto/ID171800
Laser annealing of amorphous carbon films (Articolo in rivista)
- Type
- Label
- Laser annealing of amorphous carbon films (Articolo in rivista) (literal)
- Anno
- 2009-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.apsusc.2008.10.062 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Cappelli E. 1; Scilletta C. 1; Orlando S. 2; Valentini V. 1; Servidori M. 3 (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- Laser and Plasma in Micro- and Nano-Scale Materials Processing and Diagnostics - Proceedings from the European Material Research Society Spring Meeting 2008 Symposium B. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Scopu (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1) CNR-ISC, Montelibretti, via Salaria km 29.3, P.O. Box 10, 00016 Rome, Italy
2) CNR-IMIP, sez. Potenza, 85050 Tito Scalo, Potenza, Italy
3) CNR-IMM sez. Bologna, Via P. Gobetti 101, 40129 Bologna, Italy (literal)
- Titolo
- Laser annealing of amorphous carbon films (literal)
- Abstract
- Amorphous (a-C) Carbon thin films were deposited, using pulsed laser deposition (PLD) with a Nd:YAG laser ( 1064 nm, 7 ns), from a pyrolytic graphite target, on < 1 0 0 > silicon and refractory metal (Mo) substrates to a film thickness of 55, 400 and 500 nm. Samples were grown at RT and then annealed by a laser annealing technique, to reduce residual stress and induce a locally confined \"graphitization'' process.
The films were exposed to irradiation, in vacuum, by a Nd: YAG pulsed laser, operating at different wavelengths ( VIS, N-UV) and increasing values of energy from 6-100 mJ/pulse. The thinner films were completely destroyed by N-UV laser treatment also at lower energies, owing to the almost direct propagation of heat to the Si substrate with melting and ruinous blistering effects.
For thicker films the Raman micro-analysis evidenced the influence of laser treatments on the sp(3)/sp(2) content evolution, and established the formation of aromatic nano-structures of average dimension 4.1 divided by 4.7 nm ( derived from the I-D/I-G peak ratio), at fluence values round 50 mJ/cm(2) for N-UV and 165 mJ/cm(2) for VIS laser irradiation. Higher fluences were not suitable for a-Carbon \"graphitization'', since a strong ablation process was the prominent effect of irradiation.
Grazing incidence XRD (GI-XRD) used to evaluate the dimension and texturing of nano-particles confirmed the findings of Raman analysis. The effects of irradiation on surface morphology were studied by SEM analysis. (literal)
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