Effect of He induced nanovoid on B implanted in Si: the microscopic mechanism (Contributo in atti di convegno)

Type
Label
  • Effect of He induced nanovoid on B implanted in Si: the microscopic mechanism (Contributo in atti di convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • E. Bruno, S. Mirabella, F. Priolo, F. Giannazzo, V. Raineri, E. Napolitani, A. Carnera (2007)
    Effect of He induced nanovoid on B implanted in Si: the microscopic mechanism
    in 15th IEEE (Institute of Electrical and Electronics Engineers) International Conference on Advanced Thermal Processing of Semiconductors, Catania, ITALY, OCT 02-05, 2007
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • E. Bruno, S. Mirabella, F. Priolo, F. Giannazzo, V. Raineri, E. Napolitani, A. Carnera (literal)
Pagina inizio
  • 105 (literal)
Pagina fine
  • 110 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • 15TH IEEE INTERNATIONAL CONFERENCE ON ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS - RTP 2007 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
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  • In this work we demonstrate that He co-implantation can be a powerful tool to control B diffusion in crystalline silicon (c-Si). In particular, the He induced damage leads to the formation of a distribution of nanovoids near the surface that locally suppress the amount of self-interstitials (Is) generated by further B implantation. Thus, B diffusion is reduced and the B implanted profile assumes a box-like shape. In particular, we analyze the microscopic mechanisms leading to the implanted B - nanovoids interaction, demonstrating that the Is injected from the B implanted region annihilate at nanovoids while eroding the nanovoid front layer. By means of a simulation of B diffusion, we will demonstrate that the consequent non-uniform interstitial supersaturation within the sample determines the peculiar B box-like shape, which is particularly appealing for device fabrication. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Catania, CNR, INFM, MATIS, I-95123 Catania, Italy Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy Univ Padua, Dipartimento Fis, I-35131 Padua, Italy Univ Padua, MATIS, CNR, INFM, I-35131 Padua, Italy CNR, IMM, Sez Catania, I-95121 Catania, Italy (literal)
Titolo
  • Effect of He induced nanovoid on B implanted in Si: the microscopic mechanism (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-1-4244-1227-3 (literal)
Abstract
  • In this work we demonstrate that He co-implantation can be a powerful tool to control B diffusion in crystalline silicon (c-Si). In particular, the He induced damage leads to the formation of a distribution of nanovoids near the surface that locally suppress the amount of self-interstitials (Is) generated by further B implantation. Thus, B diffusion is reduced and the B implanted profile assumes a box-like shape. In particular, we analyze the microscopic mechanisms leading to the implanted B - nanovoids interaction, demonstrating that the Is injected from the B implanted region annihilate at nanovoids while eroding the nanovoid front layer. By means of a simulation of B diffusion, we will demonstrate that the consequent non-uniform interstitial supersaturation within the sample determines the peculiar B box-like shape, which is particularly appealing for device fabrication. (literal)
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