Recent advances in characterization of CaCu3Ti4O12 thin films by spectroscopic ellipsometric metrology (Articolo in rivista)

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Label
  • Recent advances in characterization of CaCu3Ti4O12 thin films by spectroscopic ellipsometric metrology (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1021/ja0541229 (literal)
Alternative label
  • R. Lo Nigro, G. Malandrino, R. G. Toro, M. Losurdo, G. Bruno, I. Fragala' (2005)
    Recent advances in characterization of CaCu3Ti4O12 thin films by spectroscopic ellipsometric metrology
    in Journal of the American Chemical Society (Print); ACS, American chemical society, Washington, DC (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • R. Lo Nigro, G. Malandrino, R. G. Toro, M. Losurdo, G. Bruno, I. Fragala' (literal)
Pagina inizio
  • 13772 (literal)
Pagina fine
  • 13773 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 127 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 2 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Catania, Dipartimento Sci Chim, I-95125 Catania, Italy; INSTM, UDR Catania, I-95125 Catania, Italy; CNR, IMM, Ist Microeletton & Microsistemi, I-95121 Catania, Italy; Ist Metodol Inorgan & Plasmi, IMIP, CNR, I-70126 Bari, Italy; INSTM, UDR Bari, Bari, Italy (literal)
Titolo
  • Recent advances in characterization of CaCu3Ti4O12 thin films by spectroscopic ellipsometric metrology (literal)
Abstract
  • CaCu3Ti4O12 (CCTO) thin films were successfully grown on LaAlO3(100) and Pt/TiO2/SiO2/Si(100) substrates by a novel MOCVD approach. Epitaxial CCTO(001) thin films have been obtained on LaAlO3(100) substrates, while polycrystalline CCTO films have been grown on Pt/TiO2/SiO2/Si(100) substrates. Surface morphology and grain size of the different nanostructured deposited films were examined by AFM and spectroscopic ellipsometry has been used to investigate the electronic part of the dielectric constant (e2). Looking at the e2 curves it can be seen that with increasing the film structural order a greater dielectric response has been obtained. The measured dielectric properties accounted for the ratio between grain volumes and grain boundary areas, which is very different in the different structured films. (literal)
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