RBS-channeling analysis of ion-irradiation effects in heavily-doped Si : As (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• RBS-channeling analysis of ion-irradiation effects in heavily-doped Si : As (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.nimb.2007.01.009 (literal)

Alternative label

• G. Lulli, M. Bianconi, M. Ferri, G. Fortunato, L. Mariucci (2007)
  RBS-channeling analysis of ion-irradiation effects in heavily-doped Si : As
  in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• G. Lulli, M. Bianconi, M. Ferri, G. Fortunato, L. Mariucci (literal)

Pagina inizio

• 253 (literal)

Pagina fine

• 256 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 257 (literal)

Rivista

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, I-40129 Bologna, Italy; CNR, IFN, I-00156 Rome, Italy (literal)

Titolo

• RBS-channeling analysis of ion-irradiation effects in heavily-doped Si : As (literal)

Abstract

• Structural modification of heavily-doped, laser annealed Si:As induced by 2 MeV Si+ irradiation, is investigated by the Rutherford backscattering-channeling (RBS-C) technique. Aligned (001) spectra, (001) to {110} angular scans and electrical activation measurements are compared with results previously obtained in silicon-on-insulator layers containing the same concentration of As, but activated by furnace instead of laser. Defects injected by ion bombardment interact with As, leading in laser annealed sample to strong electrical deactivation and to an increase in As RBS-C yield much larger than the one of Si. Comparison of samples with different initial location of As, shows that the distribution of dopant among the different kinds of lattice arrangements (schematized as substitutional, slightly displaced and random/incoherent) is nearly the same after irradiation. This result can be explained with the achievement under MeV irradiation, of a stationary state in the near-surface region, characterized by a dynamic equilibrium of intrinsic and extrinsic defects, in which the memory of As location before irradiation is substantially lost. (literal)

Prodotto di

• Dispositivi per elettronica di larga area (MD.P05.001.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di Modelli Fisici, Simulazioni e Tecniche di Caratterizzazione per le Nanoscienze (MD.P05.004.001) (Modulo)
• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• Dispositivi per elettronica di larga area (MD.P05.001.001) (Modulo)

Autore CNR

• GIORGIO LULLI (Persona)
• GUGLIELMO FORTUNATO (Persona)
• MARCO BIANCONI (Persona)
• MATTEO FERRI (Unità di personale esterno)
• LUIGI MARIUCCI (Unità di personale interno)

Insieme di parole chiave

• Keywords of "RBS-channeling analysis of ion-irradiation effects in heavily-doped Si : As" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• GIORGIO LULLI (Persona)
• MARCO BIANCONI (Persona)
• GUGLIELMO FORTUNATO (Persona)
• MATTEO FERRI (Unità di personale esterno)
• LUIGI MARIUCCI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• Sviluppo di Modelli Fisici, Simulazioni e Tecniche di Caratterizzazione per le Nanoscienze (MD.P05.004.001) (Modulo)
• Dispositivi per elettronica di larga area (MD.P05.001.004) (Modulo)
• Dispositivi per elettronica di larga area (MD.P05.001.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Insieme di parole chiave di

• Keywords of "RBS-channeling analysis of ion-irradiation effects in heavily-doped Si : As" (Insieme di parole chiave)