Role of fight scattering in excimer laser annealing of Si (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Role of fight scattering in excimer laser annealing of Si (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.1906318 (literal)

Alternative label

• La Magna A., Alippi P., Privitera V., Fortunato G. (2005)
  Role of fight scattering in excimer laser annealing of Si
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• La Magna A., Alippi P., Privitera V., Fortunato G. (literal)

Pagina inizio

• 161905 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 86 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Catania, I-95121 Catania, Italy; CNR, IFN, I-00156 Rome, Italy (literal)

Titolo

• Role of fight scattering in excimer laser annealing of Si (literal)

Abstract

• We have studied, by means of simulations and experiments, the interaction between the electromagnetic field, generated by excimer laser, and Si device. This study strictly refers to laser annealing process, recently attracting a broad interest as an alternative thermal treatment. Our numerical methodology is based on coupling the simulation of the electromagnetic field, for the calculation of the heat source distribution, and the simulations of the thermal, phase, and impurity fields. Simulations of laser irradiation in metal-oxide- semiconductor transistor structures are discussed and compared to the corresponding experimental analysis. Our results are useful to understand problematics and perspectives of the laser annealing application in the fabrication of scaled devices (literal)

Prodotto di

• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)
• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Processi laser per dispostivi a semiconduttore (MD.P05.001.003) (Modulo)

Autore CNR

• PAOLA ALIPPI (Persona)
• GUGLIELMO FORTUNATO (Persona)
• VITTORIO PRIVITERA (Persona)
• ANTONINO LA MAGNA (Persona)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)
• PAOLA ALIPPI (Persona)
• GUGLIELMO FORTUNATO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)
• Processi laser per dispostivi a semiconduttore (MD.P05.001.003) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)