R.F. sputtering deposition of buffer layers for Si/YBCO integrated microelectronics (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• R.F. sputtering deposition of buffer layers for Si/YBCO integrated microelectronics (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1142/S0217979205032929 (literal)

Alternative label

• G. Rombolà, V. Ballarini, A. Chiodoni, L. Gozzelino, E. Mezzetti, B. Minetti, C.F. Pirri, E. Tresso, and C. Camerlingo (2005)
  R.F. sputtering deposition of buffer layers for Si/YBCO integrated microelectronics
  in International journal of modern physics b
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• G. Rombolà, V. Ballarini, A. Chiodoni, L. Gozzelino, E. Mezzetti, B. Minetti, C.F. Pirri, E. Tresso, and C. Camerlingo (literal)

Pagina inizio

• 4605 (literal)

Pagina fine

• 4617 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 19 (literal)

Rivista

• International journal of modern physics b (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 13 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Politecn Torino, Dept Phys, I-10129 Turin, Italy 2. IstCibernet E Caianiello, CNR, I-80078 Pozzuoli, Na, Italy (literal)

Titolo

• R.F. sputtering deposition of buffer layers for Si/YBCO integrated microelectronics (literal)

Abstract

• The aim of the present work is the optimization of the Si/buffer-layer/YBCO multilayer deposition process so as to grow superconducting films of quality suitable for device applications. The structural properties of the Si/CeO(2) system, obtained by RF magnetron sputtering of CeO(2) targets in Ar atmosphere, have been studied. More than 50 films have been deposited and some of them submitted to post-deposition annealing treatments both in N(2) and O(2) atmospheres. The presence of an unwanted amorphous SiO(2) layer at the Si/CeO(2) interface compromises the YBCO c-axis orientation, and therefore the sharpness of the R versus T transition. A newly designed deposition system has been realized: it has been specially conceived for obtaining bi- and tri-layers, adopting two targets in YSZ and CeO(2), respectively. Results on YSZ/Si and CeO(2)/YSZ/Si systems obtained with the new machine axe presented and discussed: (100) oriented YSZ films with nominal thickness of 40 nm have been obtained. The CeO(2) film subsequently deposited has the desired (100) orientation. The YBCO film, in the final YBCO/YSZ/CeO(2)/S' configuration, is c-axis oriented. (literal)

Prodotto di

• Fisica e Tecnologia dei Sistemi Coerenti (MD.P04.010.001) (Modulo)
• Istituto di Scienze Applicate e Sistemi Intelligenti \"Eduardo Caianiello\" (ISASI) (Istituto)

Autore CNR

• CARLO CAMERLINGO (Persona)

Incoming links:

Prodotto

• Istituto di Scienze Applicate e Sistemi Intelligenti \"Eduardo Caianiello\" (ISASI) (Istituto)
• Fisica e Tecnologia dei Sistemi Coerenti (MD.P04.010.001) (Modulo)

Autore CNR di

• CARLO CAMERLINGO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• International journal of modern physics b (Rivista)