http://www.cnr.it/ontology/cnr/individuo/prodotto/ID171431
Er3+/Yb3+ activated silica-hafnia planar waveguides for photonics fabricated by rf-sputtering (Contributo in atti di convegno)
- Type
- Label
- Er3+/Yb3+ activated silica-hafnia planar waveguides for photonics fabricated by rf-sputtering (Contributo in atti di convegno) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1117/12.664564 (literal)
- Alternative label
Chiasera A., Bhaktha S., Brenci M., Chiappini A., Ferrari M., Foglietti V., Gonçalves R. R., Jestin Y., Minotti A., Montagna M., Moser E., Pelli S., Righini G., Tosello C., Vishunubhatla K. C (2006)
Er3+/Yb3+ activated silica-hafnia planar waveguides for photonics fabricated by rf-sputtering
in SPIE Europe 2006 - Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, Strasbourg, 3-7 April 2006
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Chiasera A., Bhaktha S., Brenci M., Chiappini A., Ferrari M., Foglietti V., Gonçalves R. R., Jestin Y., Minotti A., Montagna M., Moser E., Pelli S., Righini G., Tosello C., Vishunubhatla K. C (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- Proc. SPIE, 2006, v. 6183, p. 173-180. 3-7 April 2006 Strasbourg, France. SPIE 6183 (2006) pp. 173-180. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Note
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Enrico Fermi Center, c/o Compendio del Viminale, 00184 Roma, Italy;
CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Group, via Sommarive 14, 38050 Povo (TN), Italy;
Dipartimento di Fisica, Università di Trento, CSMFO Group, via Sommarive 14, 38050 Povo (TN), Italy;
School of Physics, University of Hyderabad, Gachibowli, Hyderabad - 500 046, India;
Optoelectronic Technology Laboratory, Nello Carrara Institute of Applied Physics, IFAC - CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Firenze), Italy;
CNR-IFN, Istituto di Fotonica e Nanotecnologie, MEMS Group, Via Cineto Romano 42, 00156 Roma, Italy;
University of São Paulo, FFCLRP, Department of Chemistry, Av. Bandeirantes 3900, CEP 14040-901, Ribeirao Preto-SP, Brazil (literal)
- Titolo
- Er3+/Yb3+ activated silica-hafnia planar waveguides for photonics fabricated by rf-sputtering (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
- Abstract
- Er3+/Yb3+-codoped 95.8 SiO2 - 4.2 HfO 2 planar waveguide was fabricated by the rf-sputtering technique. The sample was doped with 0.2 mol% Er and 0.2 mol% Yb. The thickness and the refractive indices of the waveguide were measured by an m-line apparatus operating at 543.5, 632.8, 1319 and 1542 nm. The losses, for the TE0 mode, were evaluated at 632.8, 1319 and 1542 nm. The structural properties were investigated with energy dispersive spectroscopy and Raman spectroscopy. The waveguide had a single-mode at 1.3 and 1.5 ?m and an attenuation coefficient of 0.2 dB/cm at 1.5 ?m was obtained. The emission of 4I 13/2 -> 4I15/2 of Er3+ ion transition with a 42 nm bandwidth was observed upon excitation in the TE 0 mode at 980 and 514.5 nm. The 4I13/2 level decay curves presented a single-exponential profile, with a lifetime of 4.6 ms. Back energy transfer from Er3+ to Yb3+ was demonstrated by measurement of Yb3+ emission upon Er3+ excitation at 514.5 nm. Photoluminescence excitation spectroscopy was used to obtain information about the effective excitation efficiency of Er3+ ions by co-doping with Yb ions. Channel waveguides in rib configuration were obtained by etching the active film by a wet etching process. Scanning Electron Microscopy was used to analyze the morphology of the waveguides. (literal)
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