X-ray absorption study of light emitting silicon nanocrystals. (Articolo in rivista)

Type
Label
  • X-ray absorption study of light emitting silicon nanocrystals. (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S1386-9477(02)00610-0 (literal)
Alternative label
  • N. Daldosso, G. Dalba, R. Grisenti, L. Dal Negro, L. Pavesi, F. Rocca, F. Priolo, G. Franzò, D. Pacifici and F. Iacona (2003)
    X-ray absorption study of light emitting silicon nanocrystals.
    in Physica. E, Low-dimensional systems and nanostructures (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • N. Daldosso, G. Dalba, R. Grisenti, L. Dal Negro, L. Pavesi, F. Rocca, F. Priolo, G. Franzò, D. Pacifici and F. Iacona (literal)
Pagina inizio
  • 321 (literal)
Pagina fine
  • 325 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 16 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 3-4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • INFM, Via Sommarive 14, I-38050 Povo, Trento, Italy. Univ Trento, Dipartimento Fis, I-38050 Povo, Trento, Italy CNR, IFN, Sez CeFSA Trento, I-38050 Povo, Trento, Italy INFM, I-95129 Catania, Italy Univ Catania, Dipartimento Fis, I-95129 Catania, Italy CNR, IMM, Sez Catania, I-95121 Catania, Italy (literal)
Titolo
  • X-ray absorption study of light emitting silicon nanocrystals. (literal)
Abstract
  • X-ray absorption spectra obtained by total electron yield (TEY) at the Si absorption K-edge have been measured to have chemical and structural information about Si nanocrystals (Si-nc) produced by plasma-enhanced chemical vapour deposition (PECVD). The TEY technique has been employed to investigate the formation of Si-nc and the modification of the silica matrix as a function of annealing temperature (500-1250degreesC) and of silicon content in the film (35-46 at%). The amount of silicon present in the Si-nc has been evaluated by TEY. Thanks to Rutherford backscattering spectrometry measurements, the amount of Si atoms bonded to oxygen and to nitrogen, incorporated by PECVD, has been assessed. A compositional model that interprets the experimental findings is presented. (literal)
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