http://www.cnr.it/ontology/cnr/individuo/prodotto/ID171101
Crystallization mechanisms in laser irradiated thin amorphous silicon films (Articolo in rivista)
- Type
- Label
- Crystallization mechanisms in laser irradiated thin amorphous silicon films (Articolo in rivista) (literal)
- Anno
- 2003-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/S0040-6090(02)01254-3 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Mariucci L.; Pecora A.; Fortunato G.; Spinella C.; Bongiorno C. (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- IFN-CNR (Mariucci L.; Pecora A.; Fortunato G.)
IMM-CNR (Spinella C.; Bongiorno C.) (literal)
- Titolo
- Crystallization mechanisms in laser irradiated thin amorphous silicon films (literal)
- Abstract
- Structural properties of thin polycrystalline silicon films, crystallized by single shot excimer laser annealing at different laser energy densities, have been investigated. Formation of disk structures has been observed in a wide range of energy densities, from complete melting down to 180 mj/cm(2). These structures have been correlated to the lateral growth of grains starting from the small grains present in the central regions of the disks. We propose a new crystallization scenario for energy densities below the complete melting. In this framework, the recalescence effect plays an important role while the super lateral growth-regime is no longer a particular crystallization condition but simply represents the upper energy density limit of partial melt crystallization regime. (literal)
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