Study of the thermal properties of Pr(III) precursors and their implementation in the MOCVD growth of praseodymium oxide films (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Study of the thermal properties of Pr(III) precursors and their implementation in the MOCVD growth of praseodymium oxide films (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1149/1.1779336 (literal)

Alternative label

• Lo Nigro, R; Toro, RG; Malandrino, G; Fragala, IL; Rossi, P; Dapporto, P (2004)
  Study of the thermal properties of Pr(III) precursors and their implementation in the MOCVD growth of praseodymium oxide films
  in Journal of the Electrochemical Society
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Lo Nigro, R; Toro, RG; Malandrino, G; Fragala, IL; Rossi, P; Dapporto, P (literal)

Pagina inizio

• 206 (literal)

Pagina fine

• 213 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 151 (literal)

Rivista

• Journal of the Electrochemical Society (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Catania, I-95121 Catania, Italy; Univ Catania, Dipartimento Sci Chim, I-95125 Catania, Italy; INSTM, I-95125 Catania, Italy; Dipartimento Energet, I-50139 Florence, Italy (literal)

Titolo

• Study of the thermal properties of Pr(III) precursors and their implementation in the MOCVD growth of praseodymium oxide films (literal)

Abstract

• A praseodymium adduct, Pr(hfa)(3) . diglyme [(H-hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentandione, diglyme = CH3O(CH2CH2O)(2)CH3)] has been synthesized. It has been applied as a Pr source for the metallorganic chemical vapor deposition (MOCVD) of praseodymium containing films on silicon substrate and compared with Pr(tmhd)(3) [(H-tmhd = 2,2,6,6-tetramethyl-3,5-heptandione)] precursor. Physical and thermal properties of both Pr(hfa)(3) . diglyme and Pr(tmhd)(3) precursors have been fully analyzed and their efficacy as MOCVD precursors for the growth of praseodymium oxide films have been fully tested. Depending on the oxygen partial pressure (p(O2)), different praseodymium oxide phases have been obtained. (literal)

Prodotto di

• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ROBERTA GRAZIA TORO (Unità di personale interno)
• RAFFAELLA LO NIGRO (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Study of the thermal properties of Pr(III) precursors and their implementation in the MOCVD growth of praseodymium oxide films" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Autore CNR di

• RAFFAELLA LO NIGRO (Unità di personale interno)
• ROBERTA GRAZIA TORO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of the Electrochemical Society (Rivista)

Insieme di parole chiave di

• Parole chiave di "Study of the thermal properties of Pr(III) precursors and their implementation in the MOCVD growth of praseodymium oxide films" (Insieme di parole chiave)