Electrical activation and carrier compensation in Si and Mg implanted GaN by scanning capacitance microscopy (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Electrical activation and carrier compensation in Si and Mg implanted GaN by scanning capacitance microscopy (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Alternative label

• F. Giannazzo, F. Iucolano, F. Roccaforte, L. Romano, M.G. Grimaldi, V.Raineri (2008)
  Electrical activation and carrier compensation in Si and Mg implanted GaN by scanning capacitance microscopy
  in Diffusion and defect data, solid state data. Part B, Solid state phenomena
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• F. Giannazzo, F. Iucolano, F. Roccaforte, L. Romano, M.G. Grimaldi, V.Raineri (literal)

Pagina inizio

• 491 (literal)

Pagina fine

• 496 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 131-133 (literal)

Rivista

• Diffusion and defect data, solid state data. Part B, Solid state phenomena (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• Vol. 131-133 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Dipartimento di fisica ed astronomia - Università di Catania (literal)

Titolo

• Electrical activation and carrier compensation in Si and Mg implanted GaN by scanning capacitance microscopy (literal)

Abstract

• We studied the effect of the annealing temperatures (in the 1100-1200 degrees C temperature range) on the electrical activation of ion implanted Si and Mg in GaN. Si+ ions were implanted at multiple energies (from 80keV to 180keV) and with a total fluence up to 2.7x 10(14) cm(-2) in heteroepitaxial GaN films on sapphire. Some samples were subjected to conventional low ramp rate processes at 1100 degrees C and 1200 degrees C in N-2 ambient. A fast ramp rate pre-annealing in N-2 ambient was carried out on other samples before those low-ramp rate processes at 1100 degrees C and 1200 degrees C. The calibrated Scanning Capacitance Microscopy (SCM) was applied to determine the active ('i.e. substitutional) Si depth profile. The rapid pre-annealing process leads to an increase from 36% to 63% in the substitutional Si dose. The Mg ions were implanted with energy of 50keV and fluence of 5x10(14) cm(-2) in n GaN layer on sapphire. Two fast ramp rate annealing process were performed. However, only an annealing at 1200 degrees C for 30s in N-2 allows to observe, by means of SCM, the formation of a p layer. (literal)

Prodotto di

• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Autore CNR

• VITO RAINERI (Persona)
• Ferdinando Iucolano (Unità di personale esterno)
• FABRIZIO ROCCAFORTE (Persona)
• FILIPPO GIANNAZZO (Persona)

Insieme di parole chiave

• Parole chiave di "Electrical activation and carrier compensation in Si and Mg implanted GaN by scanning capacitance microscopy" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• Ferdinando Iucolano (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Diffusion and defect data, solid state data. Part B, Solid state phenomena (Rivista)

Insieme di parole chiave di

• Parole chiave di "Electrical activation and carrier compensation in Si and Mg implanted GaN by scanning capacitance microscopy" (Insieme di parole chiave)