Electrical activation and carrier compensation in Si and Mg implanted GaN by scanning capacitance microscopy (Articolo in rivista)

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Label
  • Electrical activation and carrier compensation in Si and Mg implanted GaN by scanning capacitance microscopy (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • F. Giannazzo, F. Iucolano, F. Roccaforte, L. Romano, M.G. Grimaldi, V.Raineri (2008)
    Electrical activation and carrier compensation in Si and Mg implanted GaN by scanning capacitance microscopy
    in Diffusion and defect data, solid state data. Part B, Solid state phenomena
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • F. Giannazzo, F. Iucolano, F. Roccaforte, L. Romano, M.G. Grimaldi, V.Raineri (literal)
Pagina inizio
  • 491 (literal)
Pagina fine
  • 496 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 131-133 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • Vol. 131-133 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dipartimento di fisica ed astronomia - Università di Catania (literal)
Titolo
  • Electrical activation and carrier compensation in Si and Mg implanted GaN by scanning capacitance microscopy (literal)
Abstract
  • We studied the effect of the annealing temperatures (in the 1100-1200 degrees C temperature range) on the electrical activation of ion implanted Si and Mg in GaN. Si+ ions were implanted at multiple energies (from 80keV to 180keV) and with a total fluence up to 2.7x 10(14) cm(-2) in heteroepitaxial GaN films on sapphire. Some samples were subjected to conventional low ramp rate processes at 1100 degrees C and 1200 degrees C in N-2 ambient. A fast ramp rate pre-annealing in N-2 ambient was carried out on other samples before those low-ramp rate processes at 1100 degrees C and 1200 degrees C. The calibrated Scanning Capacitance Microscopy (SCM) was applied to determine the active ('i.e. substitutional) Si depth profile. The rapid pre-annealing process leads to an increase from 36% to 63% in the substitutional Si dose. The Mg ions were implanted with energy of 50keV and fluence of 5x10(14) cm(-2) in n GaN layer on sapphire. Two fast ramp rate annealing process were performed. However, only an annealing at 1200 degrees C for 30s in N-2 allows to observe, by means of SCM, the formation of a p layer. (literal)
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