High resolution investigation of atomic interdiffusion during Co/Ni/Si phase transition (Contributo in atti di convegno)

Type
Label
  • High resolution investigation of atomic interdiffusion during Co/Ni/Si phase transition (Contributo in atti di convegno) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Alberti A, Cafra B, Bongiorno C, La Via F, Spinella C (2003)
    High resolution investigation of atomic interdiffusion during Co/Ni/Si phase transition
    in 203th Electrochemical Society Meeting, Parigi
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Alberti A, Cafra B, Bongiorno C, La Via F, Spinella C (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR Catania (literal)
Titolo
  • High resolution investigation of atomic interdiffusion during Co/Ni/Si phase transition (literal)
Abstract
  • Cobalt disilicide is now replacing titanium in the silicon technology to form highly conductive narrow lines on the gate stack of modern Metal-Oxide-Semiconductor devices (MOS). Nevertheless, further scaling down of device dimensions is giving as a critical concern the consumption of silicon on the active area and the process window for the silicide to be formed1. Silicides formed by Co/Ni/Si reaction are the future challenge for CMOS technology due to the low thermal budget and the expected lower silicon consumption with respect to conventional systems. Nevertheless, in largely scaled systems compared to what is known on thick Co/Ni bilayers, phase transformation could return to be a main concern. In this work we studied the phase transition of Co/Ni thin films on amorphous silicon using a novel approach based on in situ sheet resistance analyses during isothermal annealing processes, and on ex-situ microscopy analyses using Energy Filtered Transmission Electron Microscopy (EFTEM) and Selected Area Electron Diffraction (SAED). (literal)
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
data.CNR.it