Hysteresis-type current-voltage characteristics in Au/eumelanin/ITO/glass structure: Towards melanin based memory (Articolo in rivista)

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  • Hysteresis-type current-voltage characteristics in Au/eumelanin/ITO/glass structure: Towards melanin based memory (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.orgel.2010.08.001 (literal)
Alternative label
  • Ambrico, Marianna; Cardone, Antonio; Ligonzo, Teresa; Augelli, Vincenzo; Ambrico, Paolo Francesco; Cicco, Stefania; Farinola, Gianluca M.; Filannino, Michele; Perna, Giuseppe; Capozzi, Vito; (2010)
    Hysteresis-type current-voltage characteristics in Au/eumelanin/ITO/glass structure: Towards melanin based memory
    in Organic electronics (Print); ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ambrico, Marianna; Cardone, Antonio; Ligonzo, Teresa; Augelli, Vincenzo; Ambrico, Paolo Francesco; Cicco, Stefania; Farinola, Gianluca M.; Filannino, Michele; Perna, Giuseppe; Capozzi, Vito; (literal)
Pagina inizio
  • 1809 (literal)
Pagina fine
  • 1814 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 11 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 11 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Institute for Inorganic Methodologies and Plasmas (IMIP), CNR UOS Bari, Via Orabona 4, 70126 Bari, Italy CNR-ICCOM-UOS di Bari, Via Orabona 4, 70126 Bari, Italy Dipartimento Interateneo di Fisica, Università degli Studi di Bari, Via Amendola 172, 70126 Bari, Italy Dipartimento di Chimica, via Orabona 4, 70126 Bari, Italy Department of Biomedical Sciences, University of Foggia, Viale L. Pinto, 1, 71100 Foggia, Italy (literal)
Titolo
  • Hysteresis-type current-voltage characteristics in Au/eumelanin/ITO/glass structure: Towards melanin based memory (literal)
Abstract
  • Hysteresis behaviour of the current-voltage characteristics collected on spin coated synthetic eumelanin layer embedded in the Au/eumelanin/ITO/glass structure is shown. The effect has been observed under dark both in air and vacuum environment and its magnitude has been found related to the eumelanin hydration state. Moreover, in vacuum and under white light illumination, enhancement of the hysteresis loop area respect to those collected under dark has been observed. Space charge storage and charge trapping/detrapping as possible mechanisms responsible of the observed current-voltage behaviour are discussed. Preliminary experimental results have evidenced the possible integration of eumelanin layers in electro-optical charge storage based memory devices. (literal)
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