Blueshift of optical band gap in c-axis oriented and conducting Al-doped ZnO thin films (Articolo in rivista)

Type
Label
  • Blueshift of optical band gap in c-axis oriented and conducting Al-doped ZnO thin films (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3139275 (literal)
Alternative label
  • Di Trolio A. (1); Bauer E.M. (2); Scavia G. (2,3); Veroli C. (4) (2009)
    Blueshift of optical band gap in c-axis oriented and conducting Al-doped ZnO thin films
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Di Trolio A. (1); Bauer E.M. (2); Scavia G. (2,3); Veroli C. (4) (literal)
Pagina inizio
  • 113109 (literal)
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  • 105 (literal)
Rivista
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  • http://dx.doi.org/10.1063/1.3139275 fasc. (11). American Institute of Physics. (literal)
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  • 5 (literal)
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  • 11 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • 1) CNR, Istituto dei Sistemi Complessi, U.O.S. di Montelibretti, Via Salaria Km. 29,300 00016 Monterotondo St. (Roma), Italy; 2) CNR, Istituto di Struttura della Materia, U.O.S. di Montelibretti, Via Salaria Km. 29,300 00016 Monterotondo St. (Roma), Italy; 3) CNR, Istituto per lo Studio delle Macromolecole, Via Bassini 15, 20133 Milano, Italy; 4) CNR, Istituto per lo Studio dei Materiali Nanostrutturati, Via Salaria Km 29,300 00016 Monterotondo St. (Roma), Italy (literal)
Titolo
  • Blueshift of optical band gap in c-axis oriented and conducting Al-doped ZnO thin films (literal)
Abstract
  • We have investigated the structural, optical, and electrical properties of alumina-doped zinc oxide (AZO) thin films, grown by pulsed laser deposition. The optical transmittance of the films is over 80% in the visible region, and the absorption edge shifts from about 380 nm of the undoped sample to 320 nm of the AZO film. The calculated optical band gap (Eg) of 2 wt % AZO films shows a widening up to 3.82 eV with respect to the undoped film (3.28 eV). Higher doping concentration (6 wt %) leads to films with larger Eg (4.1 eV), but also epitaxial properties are affected. A further widening of the gap occurs when the AZO films are deposited by lowering the substrate temperature (Ts) from 450 to 250 °C. These blueshifts are respectively attributed to the increase in carrier concentration, induced by Al-donor doping, and also a lower degree of crystalline order. AZO films with doping concentration of 2 wt % show resistivity values of about 10-3 Omega cm and the local I-V curves, measured by scanning tunneling spectroscopy, show higher tunneling current than ZnO film. The Al-doping route proved to be effective in tailoring the optical and electrical properties without essentially affecting the crystalline structure of the films (literal)
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