Quantum confinement effects in hydrogen-intercalated Ga1-xAsxNx-GaAs1-xNx : H planar heterostructures investigated by photoluminescence spectroscopy (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Quantum confinement effects in hydrogen-intercalated Ga1-xAsxNx-GaAs1-xNx : H planar heterostructures investigated by photoluminescence spectroscopy (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.81.235327 (literal)

Alternative label

• Trotta, R.; Cavigli, L.; Felisari, L.; Polimeni, A.; Vinattieri, A.; Gurioli, M.; Capizzi, M.; Martelli, F.; Rubini, S.; Mariucci, L.; Francardi, M.; Gerardino, A. (2010)
  Quantum confinement effects in hydrogen-intercalated Ga1-xAsxNx-GaAs1-xNx : H planar heterostructures investigated by photoluminescence spectroscopy
  in Physical review. B, Condensed matter and materials physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Trotta, R.; Cavigli, L.; Felisari, L.; Polimeni, A.; Vinattieri, A.; Gurioli, M.; Capizzi, M.; Martelli, F.; Rubini, S.; Mariucci, L.; Francardi, M.; Gerardino, A. (literal)

Pagina inizio

• 235327 (literal)

Pagina fine

• 235327 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 81 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Univ Roma La Sapienza, Dipartimento Fis, CNISM, I-00185 Rome, Italy 2. CNISM, Unita Ric Firenze, I-50019 Sesto Fiorentino, Italy 3. CNISM, Dept Phys, I-50019 Sesto Fiorentino, Italy 4. TASC INFM CNR, Area Sci Pk, I-34012 Trieste, Italy 5. IMM CNR, I-00133 Rome, Italy 6. IFN INR, I-00156 Rome, Italy (literal)

Titolo

• Quantum confinement effects in hydrogen-intercalated Ga1-xAsxNx-GaAs1-xNx : H planar heterostructures investigated by photoluminescence spectroscopy (literal)

Abstract

• Carrier quantum confinement has been achieved in dilute nitrides by controlling the peculiar kinetics of hydrogen in those materials. GaAs1-xNx/GaAs1-xNx : H planar heterostructures have been fabricated by deposition of submicrometer titanium wires (width w = 485, 175, and 80 nm) on GaAs1-xNx and subsequent H irradiation. Continuous-wave photoluminescence, PL, in ensembles of GaAs1-xNx/GaAs1-xNx : H heterostructures shows a blueshift of the PL peak energy and a marked increase in the PL radiative efficiency with decreasing one of the wire dimensions down to the nanometer-scale length. Concomitantly, time-resolved microphotoluminescence in single structures exhibits a pronounced slow down of carrier relaxation toward the ground state. All these results, supported by numerical calculations of H diffusion profiles, indicate that carrier quantum confinement can be achieved by H engineering of dilute nitrides. (literal)

Prodotto di

• Materiali nanostrutturati per celle fotovoltaiche e dispositivi su larga area (MD.P05.001.005) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P06.017.002 Sintesi e studio di nanostrutture (MD.P06.017.006) (Modulo)

Autore CNR

• FAUSTINO MARTELLI (Unità di personale interno)
• ANNAMARIA GERARDINO (Unità di personale interno)
• SILVIA RUBINI (Unità di personale interno)
• LUIGI MARIUCCI (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali nanostrutturati per celle fotovoltaiche e dispositivi su larga area (MD.P05.001.005) (Modulo)
• MD.P06.017.002 Sintesi e studio di nanostrutture (MD.P06.017.006) (Modulo)

Autore CNR di

• ANNAMARIA GERARDINO (Unità di personale interno)
• FAUSTINO MARTELLI (Unità di personale interno)
• SILVIA RUBINI (Unità di personale interno)
• LUIGI MARIUCCI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)