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Chemical vapor deposition of hafnium dioxide thin films from cyclopentadienyl hafnium compounds (Articolo in rivista)

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Chemical vapor deposition of hafnium dioxide thin films from cyclopentadienyl hafnium compounds (Articolo in rivista) (literal)

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Alternative label

Carta G. ; El Habra N. ; Rossetto G. ; Crociani L. ; Torzo G. ; Zanella P. ; Casarin M. ; Cavinato G. ; Pace G. ; Kaciulis S. ; Mezzi A. (2008)
Chemical vapor deposition of hafnium dioxide thin films from cyclopentadienyl hafnium compounds
in Thin solid films (Print); ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE (Svizzera)
(literal)

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Carta G. ; El Habra N. ; Rossetto G. ; Crociani L. ; Torzo G. ; Zanella P. ; Casarin M. ; Cavinato G. ; Pace G. ; Kaciulis S. ; Mezzi A. (literal)

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1-6 CNR-ICIS, C.so Stati Uniti, 4 35127 Padova, Italy 2,7,8 Dipartimento di Scienze Chimiche, Università di Padova, Via Marzolo,1, 35131 Padova, Italy 9 CNR-ISTM, Dipartimento di Processi Chimici dell'Ingegneria, Via Marzolo, 9, 35131 Padova, Italy 10,11 CNR-ISMN, P.O. Box 10, 00016 Monterotondo Stazione (RM), Italy (literal)

Titolo

Chemical vapor deposition of hafnium dioxide thin films from cyclopentadienyl hafnium compounds (literal)

Abstract

Thin films of HfO2 were grown by metal-organic chemical vapour deposition on fused quartz substrates in the temperature range of 400-500 degrees C using some bis(cyclopentadienyl)bis(alkoxide)hafnium (IV) precursors, namely Cp2Hf(O'Pr)(2), [Cp2Hf{OCH(CH3)CH2CH3}(2)], [Cp2Hf{OC (CH3)CH2OCH3}(2)] and [Cp2H{OC(CH2CH3)(2)CH2OCH3}(2)]. These complexes, analyzed by nuclear magnetic resonance and thermogravimetric measurements, resulted pure and very stable towards air and moisture. The obtained films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy and atomic force microscopy. The deposits contained hafnium and oxygen in the right stoichiometric ratio with a low carbon contamination and they consisted of monoclinic HfO2 phase (baddeleyite) with a granular surface morphology (literal)

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