Aging effects and electrical stability in pentacene thin film transistors (Articolo in rivista)

Type
Label
  • Aging effects and electrical stability in pentacene thin film transistors (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.tsf.2006.11.064 (literal)
Alternative label
  • Cipolloni S; Mariucci L; Valletta A; Simeone D; De Angelis F; Fortunato G (2007)
    Aging effects and electrical stability in pentacene thin film transistors
    in Thin solid films (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Cipolloni S; Mariucci L; Valletta A; Simeone D; De Angelis F; Fortunato G (literal)
Pagina inizio
  • 7546 (literal)
Pagina fine
  • 7550 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 515 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR, IFN, I-00156 Rome, Italy (literal)
Titolo
  • Aging effects and electrical stability in pentacene thin film transistors (literal)
Abstract
  • We have studied the transfer characteristic variations induced by aging effects and applied voltage in top contact pentacene thin film transistors (OTFTs) fabricated by using Polymethylmetacrylate buffer layer. The electrical stability of pentacene OTFTs was tested by applying prolonged bias stress (up to 10(4)s) with gate voltage V-gstress=-30 V and +30 V. The environmental effects were analysed by measuring the degradation of electrical characteristics of OTFT exposed to air. The results have been analysed in terms of trap state model, evaluating the channel conductance using a one-dimensional approach. This allows us to correlate the transfer characteristics variations to changes in localised state distribution. (literal)
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