Asymmetric fingered polysilicon p-channel Thin Film Transistors structure for kink effect suppression (Articolo in rivista)

Type
Label
  • Asymmetric fingered polysilicon p-channel Thin Film Transistors structure for kink effect suppression (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Bonfiglietti A, Cuscuna M, Rapisarda M, Pecora A, Mariucci L, Fortunato G, Caligiore C, Fontana E, Leonardi S (2007)
    Asymmetric fingered polysilicon p-channel Thin Film Transistors structure for kink effect suppression
    in Thin solid films (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bonfiglietti A, Cuscuna M, Rapisarda M, Pecora A, Mariucci L, Fortunato G, Caligiore C, Fontana E, Leonardi S (literal)
Pagina inizio
  • 7433 (literal)
Pagina fine
  • 7436 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 515 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR, IMM, I-00156 Rome, Italy 2. STMielect, I-95121 Catania, Italy (literal)
Titolo
  • Asymmetric fingered polysilicon p-channel Thin Film Transistors structure for kink effect suppression (literal)
Abstract
  • We present, for the first time, the application of the asymmetric fingered thin film transistor (AF-TFT) architecture to self-aligned p-channel TFTs for kink effect suppression. In AF-TFT the transistor channel region is split into two zones with different lengths (L-1 > L-2) separated by a floating p(+) region. A fourth electrode, contacting the floating p region, allowed us to measure the individual electrical characteristics of the two sub-TFTs. Output characteristics show that substantial kink effect reduction can be achieved when the sub-TFT placed at the drain end of the device has an L-2 << L-1. The electrical characteristics were analysed by using numerical simulations in the framework of the two-transistor model and we show that kink effect suppression arises from the operation in saturation regime of the source sub-TFT. The electrical characteristics of the fabricated p-channel AF-TFTs show a complete kink effect suppression, making these devices very attractive for current drivers in organic light emitting displays. (literal)
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