A phase-field approach to the simulation of the excimer laser annealing process in Si (Articolo in rivista)

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Label
  • A phase-field approach to the simulation of the excimer laser annealing process in Si (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1690861 (literal)
Alternative label
  • Antonino La Magna; Paola Alippi; Vittorio Privitera; Guglielmo Fortunato; Marco Camalleri; Bengt Svensson (2004)
    A phase-field approach to the simulation of the excimer laser annealing process in Si
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Antonino La Magna; Paola Alippi; Vittorio Privitera; Guglielmo Fortunato; Marco Camalleri; Bengt Svensson (literal)
Pagina inizio
  • 4806 (literal)
Pagina fine
  • 4814 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://jap.aip.org/resource/1/japiau/v95/i9/p4806_s1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 95 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM Sezione Catania, Stradale Primosole 50, I-95121 Catania, Italy CNR-IFN Sezione Roma, Via Cineto Romano 42, 00156 Rome Italy STMicroelctronics, Stradale Primosole 50, I-95121 Catania, Italy Department of Physics University of Oslo, 1048 Blindern N-0316 Olso, Norway (literal)
Titolo
  • A phase-field approach to the simulation of the excimer laser annealing process in Si (literal)
Abstract
  • We present a phase-field methodology applied to the simulation of dopant redistribution in Si during an excimer laser annealing process. The kinetic model derived in the framework of the Ginsburg-Landau thermodynamic formalism is made up of three coupled equations that rule the concurrent evolution of the thermal, phase, and impurity fields. The model was solved numerically by considering, as the initial conditions, the generic material modification due to an ion implant process, i.e., the implanted impurity profile in a SiO2/a-Si/c-Si stack. The model is parametrized for the cases of As and B doping, considering the thermal properties of the materials in the stack and the impurity-dependent diffusivity in the solid, liquid, and interfacial regions (the latter is characterized by a finite dimension). Simulated profiles are compared with the experimental results that have been obtained by secondary ion mass spectrometry and spreading resistance profiling. These comparisons demonstrate the reliability of the theoretical methodology. The model features are discussed in detail, especially with a view to the extension of the method to other impurity atoms and to the two-dimensional case. (literal)
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