Boron distribution in silicon after multiple pulse excimer laser annealing (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Boron distribution in silicon after multiple pulse excimer laser annealing (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Alternative label

• Monakhov E.V., Svensson B.G., Linnarsson M.K., La Magna A., Italia M., Privitera V., Fortunato G., Cuscuna M., Mariucci L. (2005)
  Boron distribution in silicon after multiple pulse excimer laser annealing
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Monakhov E.V., Svensson B.G., Linnarsson M.K., La Magna A., Italia M., Privitera V., Fortunato G., Cuscuna M., Mariucci L. (literal)

Pagina inizio

• 081901 (literal)

Pagina fine

• 081901 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 87 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Oslo, Dept Phys, N-0316 Oslo, Norway; Royal Inst Technol, Lab Mat & Semicond Phys, SE-16440 Kista, Sweden; CNR, IMM Sez Catania, I-95121 Catania, Italy; CNR, IFN, I-00156 Rome, Italy (literal)

Titolo

• Boron distribution in silicon after multiple pulse excimer laser annealing (literal)

Abstract

• We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of similar to 4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA. (literal)

Prodotto di

• Processi laser per dispostivi a semiconduttore (MD.P05.001.003) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Istituto di fotonica e nanotecnologie (IFN) (Istituto)

Autore CNR

• GUGLIELMO FORTUNATO (Persona)
• VITTORIO PRIVITERA (Persona)
• ANTONINO LA MAGNA (Persona)
• LUIGI MARIUCCI (Unità di personale interno)
• MARKUS ITALIA (Persona)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)
• MARKUS ITALIA (Persona)
• GUGLIELMO FORTUNATO (Persona)
• LUIGI MARIUCCI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• Processi laser per dispostivi a semiconduttore (MD.P05.001.003) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)