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Enhancement of the core near-band-edge emission induced by an amorphous shell in coaxial one-dimensional nanostructure: the case of SiC/SiO2 core/shell self-organized nanowires (Articolo in rivista)

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Enhancement of the core near-band-edge emission induced by an amorphous shell in coaxial one-dimensional nanostructure: the case of SiC/SiO2 core/shell self-organized nanowires (Articolo in rivista) (literal)

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Alternative label

Fabbri F. a; Rossi F. a; Attolini G. a; Salviati G. a; Iannotta S. a; Aversa L. b; Verucchi R. b; Nardi M. b; Fukata N. c; Dierre B. d; Sekiguchi T. d (2010)
Enhancement of the core near-band-edge emission induced by an amorphous shell in coaxial one-dimensional nanostructure: the case of SiC/SiO2 core/shell self-organized nanowires
in Nanotechnology (Bristol. Print); IOP Publishing Ltd., Bristol BS1 6BE (Regno Unito)
(literal)

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Fabbri F. a; Rossi F. a; Attolini G. a; Salviati G. a; Iannotta S. a; Aversa L. b; Verucchi R. b; Nardi M. b; Fukata N. c; Dierre B. d; Sekiguchi T. d (literal)

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Rivista

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In: Nanotechnology, vol. 21 article n. 345702. IOP Publishing Ltd, 2010. (literal)

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Note

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a IMEM-CNR Institute, Viale Usberti 37/A, I-43124 Parma, Italy; b IFN-CNR Institute, Via alla Cascata 56/C-Povo, I-38123 Trento, Italy; c International Center for Materials Nanoarchitectonics, National Institute for Materials Science, PRESTO JST, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan; d Nano Device Characterization Group, Advanced Electronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan; (literal)

Titolo

Enhancement of the core near-band-edge emission induced by an amorphous shell in coaxial one-dimensional nanostructure: the case of SiC/SiO2 core/shell self-organized nanowires (literal)

Abstract

We report the influence of the native amorphous SiO2 shell on the cathodoluminescence emission of 3C-SiC/SiO2 core/shell nanowires. A shell-induced enhancement of the SiC near-band-edge emission is observed and studied as a function of the silicon dioxide thickness. Since the diameter of the investigated SiC cores rules out any direct bandgap optical transitions due to confinement effects, this enhancement is ascribed to a carrier diffusion from the shell to the core, promoted by the alignment of the SiO2 and SiC bands in a type I quantum well. An accurate correlation between the optical emission and structural and SiO2-SiC interface properties is also reported. (literal)

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